Welcome To Dipanjan's Website

Short Bio

Dipanjan Basu received the B.E. degree in Electronics and TeleCommunication Engineering from Jadavpur University, Kolkata, India, in 2001, the M.Tech. degree in Electrical Engineering from the Indian Institute of Technology, Kanpur, India, in 2005, and the Ph.D. degree in Electrical and Computer Engineering from The University of Texas at Austin, Austin, TX, USA, in 2010.


He was working as a Device Simulation Engineer for Intel Corporation in the Process and Device Modeling Group in Hillsboro, OR, U.S.A. between 2010-2013, looking into device characteristics of high-mobility materials like Ge and III-Vs. Earlier (2008 summer), he had interned with Micron Technologies Pvt. Ltd. in Boise, ID, USA, where he had investigated means to control process variation for DRAMs.

His research interests are in simulation of semiconductor devices, electronic band structure calculation and application of the same in device simulation, quantum transport simulation and in multi-scale device modeling.

Dipanjan thinks that EE students wishing to pursue a career in solid state electronics devices, particularly one in research and/or education should have good solid state physics background, and he encourages students to take up relevant graduate level courses from the Physics department.

Calibration of simulations to either experimental data, or well-accepted simulation literature can not be overestimated. In case of discrepancy with experimental data, one needs to think of physical effects in experiment that are not being modeled, and if w.r.t. simulation results, one should leave no stone unturned to get the results to match. It may often be beneficial to communicate with the author of a recent paper for further clarifications.

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