Copyright © All rights reserved. Made by VBC.
Professor,
Materials Science and Engineering,
Indian Institute of Technology-Kanpur ,
Work Phone: (512) 2597353,
Email: saboo[at]iitk.ac.in
Materials Science and Engineering,
Indian Institute of Technology-
Email: saboo[at]iitk.ac.in
Surendra Singh Srivastava’s Thesis
Thesis Topic:
STUDY OF THERMAL OXIDATION AND OHMIC CONTACT TO P-GAN
STUDY OF THERMAL OXIDATION AND OHMIC CONTACT TO P-
Native oxide GaN as an insulator for MOSFET technology and Cu –Ge metal system for contact to p-GaN has been investigated. CTLM method is used for measurement of specific contact receptivity. Dry thermal oxidation of doped and undoped GaN epilayers is carried out at 850 0C for 39, 60, 120, 240 and 600 min. AFM study has been performed to characterize the as grown film and oxidized film of GaN. As grown samples are very smooth and the RMS value of surface roughen is found to lie between 4-10 Angstrons. But oxides films are n very roughness. RMS values of oxides thin films lie between 100 to 110 Angstroms