Curriculum Vitae

 

Name : SATISH CHANDRA AGARWAL

Born : Aug 16, 1944

Education:

Ph.D. (Experimental Physics) 1974 The University of Chicago

Ph.D. (Theoretical Physics) 1968 Delhi University, Delhi

Experience:

1984 – To date - Professor of Physics, I.I.T. Kanpur

1975 – 83 - Assistant Professor, I.I.T. Kanpur

1974 – 75 - Visiting Fellow, TIFR, Bombay

Research Interests:

Electronic structure of amorphous semiconductors including thin films of tetrahedrally bonded amorphous semiconductors as well as bulk and thin films of chalcogenide glasses, by studying their transport and optical properties, ESR, etc.; Thin film devices based on amorphous silicon; Amorphous multilayers; Nanocrystalline Silicon; Organic Semiconductors; Metastabilities.

Recognition:

 

Research publications: 70 Papers in Refereed Journals, 3 books

(Selected 15 papers are listed below)
  1. The Nature of Localized States in Amorphous Semiconductors

    2. A Study by Electron Spin Resonance, S.C. Agarwal, Phys. Rev B7, 685 (1973).

  2. Analysis of the Thermally Stimulated Capacitor Discharge Method for Characterizing the Localized States in Amorphous Semiconductors, S.C. Agarwal, Phys Rev B10, 4304 (1974).

  3. AC Conductivity in Amorphous Germanium, S.C. Agarwal, S. Guha and K.L. Narasimhan, J. Non-Cryst. Solids 18, 429 (1975).

  4. Surface Photovoltage in Hydrogenated Amorphous Silicon, S. Kumar and S.C. Agarwal, Appl. Phys. Letters 45, 575 (1984).

  5. Persistent Photoconductivity in Doping Modulated Multilayers and Compensated Thin Films of Hydrogenated Amorphous Silicon, S.C. Agarwal and S. Guha, Phys. Rev. B32, 8469 (1985).

  6. Thermal Equilibration Processes in Undoped Amorphous Silicon Alloys, S.C. Agarwal, J.S. Payson and S. Guha, Phys. Rev. B17, 9348 (1987).

  7. Reversible Photodarkening of Amorphous Arsenic Chalcogenides, G. Pfeiffer, M.A. Paesler and S.C. Agarwal, J. Non-Cryst. Solids 130, 111 (1990).

  8. Electronic Structure of Amorphous Semiconductors

    9. S.C. Agarwal, Bull. Mater. Sci. 18, 669 (1995).

  9. Comparison of Thermal and Light Induced Metastabilities in Lithium Doped a-Si:H, P. Agarwal, S.K. Tripathi, S. Kumar and S.C. Agarwal, J. Non-Cryst. Solids (Letters), 201, 163 (1996).

  10. Electronic Transport and Metastabilities in P-doped a-Si:H, P. Agarwal and S.C. Agarwal, J. Appl. Phys. 81, 3214 (1997).

  11. Lateral Photovoltage in Hydrogenated Amorphous Silicon, A. Srivastava and S.C. Agarwal, J. Non-Cryst. Solids, 227, 128 (1998).

  12. Comparison of Potential Fluctuations in a-Si:H Measured by Optical and Transport Methods, A.K. Sinha and S.C. Agarwal, J. Vac. Sci. Technol. B18, 1805 (2000).

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  13. Thermal Equilibrium, the Staebler-Wronski Effect and Potential Fluctuations in Lithium Doped Hydrogenated Amorphous Silicon, P. Agarwal and S.C. Agarwal, Phil. Mag. B80, 1327 (2000).

  14. Surface Effects in Nanocrystalline Silicon, N.P. Mandal and S.C. Agarwal, J. Mat. Sci: Materials in Electronics 14, 797 (2003).

  15. Arresting Photo-degradation of Porous Silicon by a Polymer Coating, N.P. Mandal, A. Sharma and S.C. Agarwal, Solid St. Comm. 129,183 (2004).