• G. Mohan and S.C. Agarwal (1965), Large Spin Propagators and their Ambiguity, Nuovo Cimento 37, 430-439.
• S.C. Agarwal (1966), Dynamics of the Y05^* (1815 MeV)

N Resonance, Phys. Rev. 141, 1325-1327.

• S.C. Agarwal (1966), Analysis of the KN Scattering by the Exact N/D Method, Phys. Rev. 145, 1196-1204.
• S. Gupta and S.C. Agarwal (1966), Meson-Baryon and Baryon-Baryon Scattering Sum Rules, Nuovo Cimento 42, 703-706.
• S.C. Agarwal (1973), The Nature of Localized States in Amorphous Semiconductors – A Study by Electron Spin Resonance, Phys. Rev. B7, 685-691.
• M.A. Peasler, S.C. Agarwal (1974), S.J. Hudgens and H. Fritzsche, Annealing Behavior of Porosity, Density of Free Spins, Stress and Diamagnetic Susceptibility in a-Ge, Tetrahedrally Bonded Amorphous Semiconductors (AIP) 20, 37.
• S.C. Agarwal (1974), Analysis of the Thermally Stimulated Capacitor Discharge Method for Characterizing the Localized States in Amorphous Semiconductors, Phys. Rev. B10, 4340-4350.
• S.C. Agarwal and H. Fritzsche (1974), Attempts to Measure Thermally Stimulated Currents in Chalcogenide Glasses, Phys Rev B10, 4351-4357.
• S.C. Agarwal, S. Guha and K.L. Narasimhan (1975), a.c. Conductivity in Amorphous Germanium, J. Non-Crystalline Solids 18, 429-437.
• S.C. Agarwal and H. Fritzsche (1976), New Interpretation of TSC and TSCD in Vitreous Semiconductors, Thermal and Photo Stimulated Currents in Insulators (Electrochemical Society, Princeton), p. 105-117.
• K.L. Narasimhan and S. Guha and S.C. Agarwal (1976), Anamolous Frequency Dependence of Conductivity in Amorphous Semiconductor Films, Solid State Comm. 20, 573.
• A. Mookerjee and S.C. Agarwal (1980), Theory of Susceptibility of a-Ge and a-Si, Bull. Mater. Sc. 2, 353-356.
• S. Kumar and S.C. Agarwal (1981), Photovoltaic Effect in Interstitially Doped a-Si:H, J de Physique 42, C4-527-530.
• D.S. Misra, P.N. Dixit and S.C. Agarwal (1981), Characterization of a-Si:H Thin Films prepared by d.c. Glow Discharge of Silane, Bull. Mater. Sci. 3, 347-357.
• S. Kumar and S.C. Agarwal (1984), Light Induced Changes, Adsorbate Effects and Surface Photovoltage in a-Si:H, Phil. Mag. B49, L53-L56.
• D.S. Misra, A. Kumar and S.C. Agarwal (1984), Thermally Stimulated Currents in a-Si:H, Phil. Mag. B49, L69-L74.
• S. Kumar and S.C. Agarwal (1984), Surface Photovoltage in Hydrogenated Amorphous Silicon, Appl. Phys. Letters 45, 575-577.
• D.S. Misra, A. Kumar and S.C. Agarwal (1984), Intensity and Temperature Dependence of Steady State Photoconductivity down to 8K and DOS Distribution obtained from these Measurement in a-Si:H, Phys. Stat. Solidi (a)85, 297-303.
• D.S. Misra, A. Kumar and S.C. Agarwal (1985), On the Electrical Methods for Measurement of Density of States in Hydrogenated Amorphous Silicon (a-Si:H), J. Non-Crystalline Solids 76, 215-242.
• D.S. Misra, A. Kumar and S.C. Agarwal (1985), Study of the Distribution of Localized States in a-Si:H by Thermally Stimulated Currents Technique, Phys. Rev. B31, 1047-1054.
• S. Kumar and S.C. Agarwal (1985), Study of Surface Photovoltage in a-Si:H, J. Appl. Phys. 58, 3798-3808.
• D.S. Misra, V.A. Singh and S.C. Agarwal (1985), Thermally Stimulated Current Studies of the Density of Gap States in Amorphous Silicon, Solid State Comm., 55, 147-150.
• D.S. Misra, V.A. Singh and S.C. Agarwal (1985), Analysis of Thermally Stimulated Currents in Amorphous Silicon, Phys. Rev. B32, 4052-4059.
• S.C. Agarwal and S. Guha (1985), Persistent Photoconductivity in a-Si:H/a-SiNx:H Layered Structures, Phys. Rev. B31, 5547-5549.
• S. Guha W. den Boer, S.C. Agarwal and M. Hack (1985), Influence of Stress on Light-Induced Effects in Amorphous Silicon Alloys, Appl. Phys. Letters 47,947-949.
• S.C. Agarwal and S. Guha (1985), Persistent Photoconductivity in Doping Modulated Multilayers and Compensated Thin Films of Hydrogenated Amorphous Silicon, Phys. Rev. B32, 8469-8472.
• S.C. Agarwal and S. Guha (1985), Amorphous Silicon Doping Superlattices, J. Non- Crystalline Solids 77, 1097-1100.
• S.C. Agarwal and S. Guha (1986), Origin of the Persistent Photoconductivity (PPC) in Modulation Doped Amorphous Silicon (a-Si:H) Multilayers, Materials Res. Soc. Symp. Proc. 70, 441-446. .

• S. Guha, J.S. Payson, S.C. Agarwal and S.R. Ovshinsky (1987), Fluorinated Amorphous Silicon - Germanium Alloys Deposited from Disilane Germane Mixture, J. Non-Crystalline Solids 97, 1455-1458.
• S.C. Agarwal, J.S. Payson and S. Guha (1987), Thermal Equilibrium Process in Undoped Amorphous Silicon, Phys. Rev. B36, 9348-9350.
• S.C. Agarwal (1991), Amorphous Silicon-based Superlattices, Bull. Mater. Sci. 14, 1257-1278.
• Pfeiffer, M.A. Paesler and S.C. Agarwal (1991), Reversible Photo darkening of Amorphous Arsenic Chalcogens, J. Non-Crystalline Solids 130, 111-143.
• A.K. Sinha, M. Malhotra, S. Kumar, E. Bhattacharya and S.C. Agarwal (1993), Sub- band Gap Absorption in Hydrogenated Amorphous Silicon Thin Films Using Constant Photocurrent Method, Ind. J. Pure & Appl. Phys. 31, 548-551.
• P. Agarwal, S.C. Agarwal, E. Bhattacharya, S. Kumar and A. Kumar (1993), Search for Thermal Metastability in Chalcogenide Glasses, Ind. J. Pure & Appl. Phys. 31, 367- 370.
• S.K. Tripathi, D. Deva, S. Kumar, P.N. Dixit and S.C. Agarwal (1993), Multichamber RF Glow Discharge System for making Amorphous Silicon Based Devices, Ind. J. Pure & Appl. Phys. 31, 660-663.
• S.C. Agarwal (1995), Electronic Structure of Amorphous Semiconductors, Bull. Mater. Sci. 18, 669-678.
• P. Agarwal, S.K. Tripathi, S. Kumar and S.C. Agarwal (1996), Comparison of Thermal and Light Induced Metastabilities in Lithium Doped a-Si:H, J. Non-Crystalline Solids 201, 163-166. .
• S.C. Agarwal (1996), Heterogeneities in Hydrogenated Amorphous Silicon, Ind. J. Pure & Appl. Phys. 34, 597-602.
• S.C. Agarwal (1996), Amorphous Silicon as Hydrogen Glass, Bull. Mater. Sci. 19, 39- 50.
• M. Malhotra, S.C. Agarwal and S. Kumar (1996), Deposition of Diamond Films on Metal Substrates, Bull. Mater. Sci. 19,455-466.
• Pratima Agarwal and S.C. Agarwal (1997), Electronic Transport and Metastabilities in P-Doped a-Si:H, J. Appl. Phys. 81, 3214-3219.
• Pratima Agarwal and S.C. Agarwal (1997), Potential Fluctuations and Staebler Wronski Effect, Solid State Phenomenon 55, 140- .
• S.C. Agarwal (1997), Metastable Defects in Hydrogenated Amorphous Silicon, Bull. Mater. Sci. 20,379-384.
• A.K. Sinha, S.K. Tripathi and S.C. Agarwal (1997), Position of Dangling Bond States in Doped a-Si:H, Solid State Phenomena 55, 137-139.
• A.K. Sinha, G.S. Narayana, S.K. Tripathi and S.C. Agarwal (1998), Density of Surface States in Li Doped a-Si:H, J. Non-Crystalline Solids 241, 128-133.
• AIok Srivastava and S.C. Agarwal (1998), Lateral Photovoltage in Hydrogenated Amorphous Silicon, J. Non-Crystalline Solids 227, 259-262.
• Pratima Agarwal, Marek Kostana, S.M. Pietruszko and S.C. Agarwal (1998), Relaxation of Thermally Induced Defects in LPCVD Amorphous Silicon, J. Non- Crystalline Solids 227, 328-331.
• S.C. Agarwal (1998), Metastabilities and Potential Fluctuations in Hydrogenated Amorphous Silicon, Metals Materials Processes 10, 209-216.
• Pratima Agarwal and S.C. Agarwal (1998), Light Soaking in Thermally Quenched Hydrogenated Amorphous Silicon, J. Non-Crystalline Solids 227, 296-300.
• A.K. Sinha and S.C. Agarwal (1998), Determination of Surface States in Hydrogenated Amorphous Silicon by Subgap Absorption Measurements, Phil. Mag. B77,945-957.
• A.K. Sinha and S.C. Agarwal (1998), Photothermal Deflection Spectroscopy and Constant Photocurrent Measurement for Subgap Absorption in Thin Films, Ind. J. Pure & Appl. Phys. 36, 328-334.
• G.S. Narayana, S.K. Tripathi, A. Srivastava, A.K. Sinha and S.C. Agarwal (1999), Residual Stress in Diamond Films using Raman Spectroscopy, Ind. J. Phys. 73S, 161- 169. :
• P. Agarwal and S.C. Agarwal (2000), Thermal Equilibrium, the Staebler-Wronski Effect and Potential Fluctuations in Lithium-Doped Hydrogenated Amorphous Silicon, Phil. Mag. B80, 1327-1346.
• P.K. Dwivedi, S.K. Tripathi, A. Pradhan, V.N. Kulkarni and S.C. Agarwal (2000), Raman Study of Ion Irradiated GeSe Films, J. Non-Crystalline Solids 266, 924-92.
• A.K. Sinha and S.C. Agarwal (2000), Comparison of Potential Fluctuations in a-Si:H Measured by the Optical and Transport Methods, J. Vac. Sci. Technol. BI8, 1805-1809.
• P. Agarwal and S.C. Agarwal (2000), Influence of lithium concentration on metastabilities in a-Si:H (Li), J. Non-Crystalline Solids 266, 469-473.
• Alok Srivastava, P. Agarwal and S.C. Agarwal (2002), Origin of Lateral Photovoltage in Hydrogenated Amorphous Silicon and Silicon Germanium Thin Films, J. Non-Cryst. Solids 299-302, 430-433.
• Alok Srivastava and S.C. Agarwal (2002), Potential Fluctuations, Diffusion Length and Lateral Photovoltage in Hydrogenated Amorphous Silicon and Silicon-Germanium Thin Films, Phil. Mag. B82, 1239-1256.
• S.C. Agarwal (2003), Potential Fluctuations and Metastabilities in Hydrogenated Amorphous Silicon, J. Mater. Sci. – Mater. Electronics, 14, 703-706.
• N.P. Mandal, S. Dey and S.C. Agarwal (2003), Effect of Surface Treatments in Nanocrystalline Silicon, Mater. Res. Soc. Proc. 737, F3.51.1-6.
• N.P. Mandal and S.C. Agarwal (2003), Light and Thermally Induced Metastabilities in Nanocrystalline Silicon, Mater. Res. Soc. Proc. 762, A17.18.1-6.
• N.P. Mandal and S.C. Agarwal (2003), Surface Effects in Nanocrystalline Silicon, J. Mater Sci. – Mater. Electronics, 14, 797-798.
• N.P. Mandal, Ashutosh Sharma and S.C. Agarwal (2003), Arresting Photodegradation of Porous Silicon by a Polymer Coating, Solid State Comm. (accepted).
• P. Bozoski, S.D. Baranovskii, P. Thomas and S.C. Agarwal (2003), Potential Fluctuations in Disordered Semiconductors Measured by Transport and Optical Methods, Phys. Stat. Sol. (accepted).
• N.P. Mandal, S. Dey and S.C. Agarwal (2003), Influence of Surface Treatments on Nanocrystalline Silicon, Thin solid Films (accepted).

1. Persistent Photoconductivity in Amorphous Silicon Alloys, Chapter in the book entitled Disordered Semiconductors (M.A. Kastner, G.A. Thomas and S.R. Ovshinsky, Eds., Plenum Press, 1987), p. 519, (with S. Guha).
2. Physics of Instabilities in Hydrogenated Amorphous Silicon Based Devices, in: Semiconductor Devices (Krishan Lal, Ed., Narosa Publishing House, New Delhi, 1996) p. 597.
3. Role of Hydrogen on the Electrical Transport Properties of Porous Silicon, in: Physics of Semiconductor Nanostructures (K.P. Jain, Ed., Narosa Publishing House, New Delhi, 1997), p. 155 (with Alok Srivastava).
4. Stability of Porous Silicon Layers, in: Science and Technology of Nanostructured Materials (B.K. Rao, S.M. Bose, M.P. Das and S.N. Sahu, Eds., Nova Science Publishers, NY, 2001) pp. 101-112.