Publications
1. A.K. Dutta, Non-destructive testing of semiconductor materials
using infrared piezobirefringence, 1st Annual Materials Science & Engineering
Technical Paper Session, Birmingham, Al, Sep. 29-30, 1987.
2. A.K. Dutta, P.K. Ajmera & B. Huner, Characterization of
defects in semiconductor materials using infrared piezobirefringence, 4th
International Workshop on the Physics of Semiconductor Devices,
Madras, India, Dec. 10-15, 1987.
3. P.K. Ajmera, B. Huner, A.K. Dutta, & C.S. Hartley, Simulation
and observation of infrared piezobirefringent images in diametrically
compressed semiconductor disks, Applied Optics, Vol. 27, No. 4, pp.
752-757, 1988 (click here).
4. A.K. Dutta, P.K. Ajmera, & B. Huner, Non-destructive testing
using infrared piezobirefringence, Final Report, US Army Research Office (Contract No. DAAG29-84-K-0153), July
1988 (click
here).
5. A.K. Dutta, P.K. Ajmera, & B. Huner, Piezobirefringence
effect in GaAs discs subjected to diametrical compression, Journal of
Applied Physics, Vol. 65, No. 12, pp. 5230-5232, 1989 (click
here).
6. A.K. Dutta & P.K. Ajmera, Characterization of defects in
semiconductor materials by infrared piezobirefringence, IEEE Southeastcon, New
Orleans, La, Apr. 1-4, pp. 1066-1071, 1990 (click
here).
7. A.K. Dutta & P.K. Ajmera, Simulation and observation of the
images of dislocations in (100) silicon using infrared piezobirefringence, Journal of
Applied Physics, Vol. 69, No. 11, pp. 7411-7418, 1991 (click
here).
8. S. Hariharan & A.K. Dutta, An improved quasi-two-dimensional
model for short-channel MOSFETs, Solid-State Electronics, Vol. 38, No. 4,
pp. 861-866, 1995 (click
here).
9. M.R. Kumar, A.K. Dutta & P.K. Chatterjee, Discrete component
realization of a laser driver circuit for use in high-speed fiber optic
communication systems, National Symposium on Fiber Optic Communication,
Networking and Sensors, IIT Kanpur, India, Dec. 8-9, pp. C-19 –
C-32, 1995.
10. Soumyo Dutta & A.K. Dutta, Study of interface stresses in
heterostructures using infrared piezobirefringence, Journal of Applied Physics,
Vol. 80, No. 12, pp. 6984-6990, 1996 (click
here).
11. A.K. Dutta, High speed receiver circuit designs for fiber optic
communications, IETE Journal of Education, Vol. 38, Nos. 3
& 4, pp. 213-223, 1997.
12. A.K. Dutta, On the output impedance of a BJT Wilson current
source, Microelectronics
Journal, Vol. 29, No. 3, pp. 67-70, 1998 (click
here).
13. Devendra Deshpande & A.K. Dutta, A new unified model for
submicron MOSFETs, Microelectronics Journal, Vol. 29, No. 8,
pp. 565-570, 1998 (click
here).
14. S.B. Thakare & A.K. Dutta, A new improved model for
subthreshold slope for submicron MOSFETs, Microelectronics Journal,
Vol. 31, No. 2, pp. 105-111, 2000 (click
here).
15. J.S. Kolhatkar & A.K. Dutta, A new substrate current model for
submicron MOSFETs, IEEE Transactions on Electron Devices,
Vol. 47, No. 4, pp. 861-863, 2000 (click
here).
16. J.S. Kolhatkar & A.K. Dutta, A new mobility model to explain
the transconductance overshoot effect observed in ultra-short channel length
MOSFETs, Solid-State
Electronics, Vol. 44, No. 4, pp. 691-696, 2000 (click
here).
17. Biranchinath Sahu & A.K.
Dutta, Automatic synthesis of CMOS operational amplifiers: a fuzzy optimization
approach, 15th International Conference on
VLSI Design and 7th Asia South Pacific Design Automation Conference (IEEE),
Bangalore, India, Jan. 7-11, pp. 366-371, 2002 (click
here).
18. Biranchinath Sahu and A.K. Dutta, A fuzzy logic based approach for
parametric optimization of MOS operational amplifiers, Microelectronics Journal, Vol. 33, No. 3,
pp. 253-264, 2002 (click
here).
19. Girish Kurkure and A.K. Dutta, A novel adaptive biasing scheme for
CMOS op-amps, Journal of Semiconductor
Technology and Science, Vol. 5, No. 3, pp. 168-172, 2005 (click
here).
20. Dipanjan Basu and A.K. Dutta, A compact ys-based MOSFET model
incorporating quantum mechanical effects, Solid-State
Electronics, Vol. 50, No. 7-8, pp. 1299-1309, 2006 (click
here).
21. Vaskar Sarkar and A.K. Dutta, An accurate, analytical, and technology-mapped definition of the surface
potential at threshold and a new postulate for the threshold voltage of
MOSFETs, Solid-State
Electronics, Vol. 50, No. 11-12, pp. 1814-1821, 2006 (click
here).
22. Imon Mondal and A.K. Dutta, An analytical gate tunneling current
model for MOSFETs having ultrathin gate oxides, IEEE Transactions on
Electron Devices, Vol. 55, No. 7, pp. 1282-1292, 2008 (click
here).
23. B. Pavan Kumar Yadav and A.K. Dutta, An analytical model of the
first Eigen energy level for MOSFETs having ultrathin gate oxides, Journal of Semiconductor Technology and
Science, Vol. 10, No. 3, pp. 203-212, 2010 (click
here).
24. Rahul Pandey and A.K. Dutta, A unified analytical
one-dimensional surface potential model for partially depleted (PD) and fully
depleted (FD) SOI MOSFETs, Journal of
Semiconductor Technology and Science, Vol.11, No.4, pp. 262-271,
2011 (click
here).
25. Rahul Pandey and A.K. Dutta,
An analytical one-dimensional
current-voltage model for FD SOI MOSFETs including the effect of substrate
depletion, Semiconductors,
Vol. 47, No.9, pp. 1224-1231, 2013 (click here).
26. Soumya
Jain and A.K. Dutta, Resistance-based approach for drain current modeling in graphene FETS
(GFETs), IEEE
Transactions on Electron Devices, Vol. 62, No. 12, pp. 4313-4321, 2015 (click
here).
27. Vishwa Prabhat and A.K.
Dutta, Analytical surface potential and drain current models of dual-metal-gate
double-gate tunnel FETs (DMG-DGTFETs), IEEE Transactions on Electron Devices, Vol. 63, No. 5, pp. 2190-2196, 2016 (click
here). (17th and 22nd
most downloaded paper in IEEE TED in April’16 and May’16 respectively)
28. Arnab Pal and A.K. Dutta,
Analytical drain current modeling of double-gate tunnel field-effect
transistors (DGTFETs), IEEE Transactions on Electron Devices, Vol. 63, No. 8, pp. 3213-3221, 2016 (click
here). (9th most
downloaded paper in IEEE TED in July’16)
29. Sudip Ghosh, Avirup
Dasgupta, Sourabh Khandelwal, A.K. Dutta, and Yogesh Singh Chauhan, Physics based modeling of
gate current including Fowler-Nordheim tunneling in GaN HEMT, 3rd
IEEE International Conference on Emerging Electronics (ICEE), IIT Bombay, December
27-30, 2016.
30. Raksharam and A.K. Dutta, A unified analytical drain
current model for double-gate junctionless field-effect transistors including
short channel effects, Solid-State Electronics, Vol. 130, pp. 33-40, 2017
(click
here). (appeared in the list of most downloaded papers in Solid-State
Electronics in May-July’17)
31. Nadim Ahmed and A.K. Dutta, Analytical models for the
2DEG concentration and gate leakage current in AlGaN/GaN HEMTs, Solid-State
Electronics, Vol. 132, pp. 64-72, 2017 (click
here). (appeared in the list of most downloaded papers in Solid-State
Electronics in April-Dec’17)
32. Somashekar Swamy and A.K.
Dutta, New analytical models for the 2DEG density and drain current in
AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, Vol. 65, No. 3, pp. 936-944, 2018 (click
here). (appeared in the list
of most downloaded papers in IEEE TED in Feb-Mar’18)
33. Himani Jawa and A.K. Dutta,
A new approach to RF small-signal modeling of MOSFETs, Semiconductor Science & Technology, Vol.
34, No. 11, 115024, 2019 (click here).
34. Kshitiz
Tyagi, Amit Verma, and A.K. Dutta, Modeling of the gate
tunneling current in MFIS NCFETs, IEEE Transactions
on Electron Devices, Vol. 68, No. 11, pp. 5886-5893, 2021 (click
here).
35. Anuj
Paharia and A.K. Dutta, A new surface potential based analytical model for MFIS
NCFETs, IEEE Transactions on Electron
Devices, Vol. 69, No. 2, pp. 870-877, 2022 (click
here).
36. Rohit Yadav and A.K. Dutta,
A new charge based analytical model for the gate current in GaN HEMTs, IEEE Transactions on
Electron Devices, Vol.
69, No. 4, pp. 2210-2213, 2022 (click
here).
37. Wajid Manzoor, A.K. Dutta,
and Yogesh Singh Chauhan, Analytical
approximation of surface potential and analysis of C-V characteristics of bulk
MOSFETs at cryogenic temperatures, Microelectronics
Journal, Vol. 129, 105586, 2022 (click
here).
38. Wajid Manzoor, Ravi Goel, A.K. Dutta, and Yogesh
Singh Chauhan, Improved surface potential based compact model for bulk MOSFETs
at cryogenic temperatures, 6th IEEE
International Conference on Emerging Electronics (ICEE), IISc
Bangalore, Dec. 11-14, 2022.
39. Yash Agrahari and A.K.
Dutta, An empirical model for bulk electron mobility in Si at cryogenic
temperatures, Silicon,
Vol. 15, No. 1, pp. 563-570, 2023 (click here).
40. Anuj
Paharia and A.K. Dutta, A theoretical study of Negative Capacitance
Field-Effect Transistors (NCFETs) using Ferroelectrics having 1st-
and 2nd-order phase transitions, Physica
Status Solidi (A), Vol. 220, No. 6, 2200663, 2023 (click here).
41. Wajid
Manzoor, A.K. Dutta, and Yogesh Singh Chauhan, Analysis
and modeling of negative transconductance in zero-threshold voltage MOSFETs at
cryogenic temperatures, IEEE Electron Devices
Technology & Manufacturing Conference (EDTM), Bangalore,
India, Mar. 3-6, pp.1-3, 2024 (click here).
42. Wajid Manzoor, A.K. Dutta,
Girish Pahwa, Nisha Manzoor, Chenming Hu, and Yogesh Singh Chauhan, Extending
standard BSIM-BULK model to cryogenic temperatures, IEEE Transactions on Electron Devices, Vol. 71, No. 8, pp. 4510-4516, 2024 (click
here).
43. Wajid
Manzoor, A.K. Dutta, and Yogesh Singh Chauhan, A
comprehensive study of threshold voltage extraction techniques from room to
cryogenic temperatures, accepted for publication in IEEE Journal of Electron Devices Society (JEDS),
2024.
44. Nisha
Manzoor, Wajid Manzoor, Debashish Nandi, A.K. Dutta, and Yogesh Singh Chauhan, Analysis
and modeling of kink effect in bulk MOSFETs at cryogenic temperatures, under review.
45. Nisha
Manzoor, Wajid Manzoor, Debashish Nandi, A.K. Dutta, and Yogesh Singh Chauhan, Characterization
and modeling of fully-depleted SOI varactors with independently-controlled
front- and back-gates for RF applications, under review.
46. Wajid Manzoor, Nisha
Manzoor, Yawar Hayat Zarkob, Debashish Nandi, A.K. Dutta, and Yogesh Singh
Chauhan, Benchmarking of the BSIM-BULK for cryo-CMOS design, under review.
47. Tejas Ketkar, Wajid Manzoor,
Shubham Sahay, and A.K. Dutta, Impact of exponential band-tail
states on characteristics of bulk MOSFETs at cryogenic temperatures, under preparation.