Thesis Supervision
Ph.D.
Sl. No. |
Name
|
Year of Completion |
Title of Thesis
|
Co-guides (if any) |
1. |
Wajid Manzoor |
Ongoing |
Cryogenic modeling of bulk
MOSFETs |
Prof. Y.S. Chauhan |
2. |
Nisha Manzoor |
Ongoing |
Cryogenic modeling of PD-
and FD-SOI MOSFETs |
=do= |
M.Tech.
Sl. No. |
Name
|
Year of Completion |
Title of Thesis
|
Co-guides (if any) |
1. |
S. Hariharan |
1993 |
A quasi two-dimensional
approach to modeling of short-channel MOSFETs |
- |
2. |
K. Ravichandran |
1993 |
Design and implementation
of a 140 Mbps mB1C coder-decoder and a bit synchronizer |
Prof. P.K. Chatterjee |
3. |
Madhuranjan Kumar |
1993 |
Design and implementation
of a laser driver and a receiver amplifier for high speed digital fiber optic
communication links |
=do= |
4. |
Devendra Deshpande |
1996 |
An improved subthreshold
region model for short-channel MOSFETs |
- |
5. |
S.B. Thakare |
1997 |
Subthreshold behavior of
submicron MOSFETs |
- |
6. |
P.K. Dwivedi |
1999 |
Design, synthesis, and
optimization of single-/two-stage CMOS op-amps |
- |
7. |
J.S. Kolhatkar |
1999 |
Modeling of substrate
current and transconductance overshoot in ultra-short channel MOSFETs |
- |
8. |
Biranchinath Sahu |
2000 |
A fuzzy logic based
approach for parametric optimization of analog circuits |
- |
9. |
Santanu Mahapatra |
2001 |
A new step to explore the
moderate inversion region for short channel MOSFETs: unified mobility and
drain current models and an improved threshold voltage model along with its
extraction procedure |
- |
10. |
Arghajit Basu |
2001 |
Application of neural
networks in analog design automation |
- |
11. |
Rejendra Kulkarni |
2004 |
Improved inversion charge
approximation in the EKV MOS Model |
- |
12. |
Girish Kurkure |
2004 |
Design of an adaptive
biasing circuit to improve the dynamic performance of CMOS op-amps operating
in subthreshold region |
- |
13. |
Dipanjan Basu |
2005 |
An advanced and explicit ys-based compact MOSFET
model incorporating the quantum mechanical effects |
- |
14. |
Arvind Niraj Mehta |
2006 |
Design of bulk-driven
down-conversion MOS mixers having low power consumption and high conversion
gain |
- |
15. |
Vaskar Sarkar |
2006 |
A novel approach of
defining the threshold voltage for MOSFETs and an accurate and
technology-mapped definition of the surface potential at the threshold point |
- |
16. |
Imon Mondal |
2007 |
An analytical gate
tunneling current model for MOSFETs having ultrathin gate oxides |
- |
17. |
Pushkar Dixit |
2007 |
A novel approach to the
frequency control of CMOS ring oscillators with high noise rejection
capability |
- |
18. |
Pavan Dwivedi |
2008 |
An analytical model of the
eigen energy level for MOSFETs having ultrathin gate dielectrics |
- |
19. |
Amit Ranjan Tripathi |
2008 |
Modified method to study the
effect of magnetic excitation on the band structure of strained InAs/GaAs
self assembled quantum dots |
- |
20. |
Nidhi Agarwal |
2008 |
Two-dimensional analysis
and modeling of undoped cylindrical gate-all-around (GAA) MOSFETs |
- |
21. |
Shaheen Shah |
2009 |
Surface potential and
threshold voltage models for short-channel single-gate fully depleted (FD)
SOI MOSFETs without invoking the charge sheet assumption |
- |
22. |
Abhishek Mittal |
2009 |
Fully integrated low phase
noise integer-N and fractional-N CMOS frequency synthesizers for Bluetooth
applications |
- |
23. |
Rahul Pandey |
2010 |
A unified analytical
one-dimensional surface potential model for partially depleted (PD) and fully
depleted (FD) SOI MOSFETs and an analytical current-voltage model for FD SOI
MOSFETs including the effect of substrate depletion |
- |
24. |
Soumya Jain |
2013 |
A novel resistance-based
approach for drain current modeling in graphene FETs |
- |
25. |
Raksha Ram |
2014 |
A unified drain current
model of double-gate junctionless field-effect transistors including short
channel effects |
- |
26. |
Nupur Choudhury |
2014 |
A unified drain current
model for laterally double diffused MOSFET (LDMOS) |
- |
27. |
Arnab Pal |
2015 |
Development of a new
analytical model for the drain current of double-gate tunnel FETs (DGTFETs) |
- |
28. |
Vishwa Prabhat |
2015 |
A study of performance of
dual-metal-gate double-gate TFETs (DMG-DGTFETs) and development of a new
surface potential based drain current model |
- |
29. |
Naresh Patel |
2015 |
Small-signal modeling of
laterally asymmetric MOSFETs including non-quasi-static effects |
Prof. Y.S. Chauhan |
30. |
Manchuri Silpa |
2015 |
Gate current modeling of
AlGaN/GaN HEMTs |
=do= |
31. |
Nadim Ahmed |
2016 |
Development of analytical
models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs |
- |
32. |
Himani |
2016 |
Y-parameter modeling of
MOSFETs |
- |
33. |
Shalini Dey |
2016 |
Investigation of buffer
trapping mechanism in AlGaN/GaN HEMTs |
Prof. Y.S. Chauhan |
34. |
Somashekar Swamy |
2017 |
Development of analytical
models for the 2DEG density, AlGaN layer carrier density, and drain current
for AlGaN/GaN HEMTs |
- |
35. |
Kshitiz Tyagi |
2021 |
Modeling of the gate
tunneling current in MFIS NCFETs |
Prof. Amit K. Verma |
36. |
Rohit Yadav |
2022 |
A new charge-based
analytical model for the gate current in GaN HEMTs |
- |
37. |
Anuj Pahariya |
2022 |
Comparative study of NCFETs with Ferroelectrics having
first- and second-order phase transitions and a surface potential based analytical model for MFIS
NCFETs |
- |
38. |
Yash Agrahari |
Ongoing |
A new empirical model for electron mobility in bulk Si at cryogenic
temperatures |
- |
39. |
Aman Altaf |
Ongoing |
Modeling of 2D
semiconductors |
- |
40. |
Mohd. Ayaz |
Ongoing |
Investigation of
performance of JLFETs with Ferroelectrics as the insulator |
- |
41. |
Venkatesh Jayanti |
Ongoing |
Investigation of the kink
effect in the C-V characteristics of MOSFETs at cryogenic temperatures |
- |
42. |
Tejas Ketkar |
Ongoing |
Investigation of the
subthreshold slope saturation of MOSFETs at cryogenic temperatures |
Prof. Shubham Sahay |
B.Tech.
Sl. No. |
Name
|
Year of Completion |
Title of Thesis
|
Co-guides (if any) |
1. |
Vikramaditya & L.H.
Sahasrabuddhe |
1992 |
Design and performance
evaluation of a BiCMOS wideband amplifier |
- |
2. |
J. Gupta & G. Raniwala |
1993 |
Process simulation of npn
BJTs |
- |
3. |
A. Mehrotra & I. De |
1994 |
Design and implementation
of a 240 Mbps bit synchronizer for high speed digital fiber optic
communication links |
Dr. Joseph John |
4. |
Soumyo Dutta |
1995 |
Study of interface
stresses in heterostructures using infrared piezobirefringence |
- |
5. |
A. Kesarwani & M.
Sonakiya |
1995 |
Design and implementation
of a music synthesizer |
Dr. Joseph John |
6. |
Mohit Dubey |
1995 |
Study of preamplifier
designs for fiber optic communication systems |
=do= |
7. |
A. Arora & P. Dubey |
1996 |
GPIB based instrumentation |
=do= |
8. |
A. Dixit & A. Sullerey |
1996 |
High speed tracker |
- |
9. |
M.K. Agarwal & S.K.
Das |
1997 |
Improvements in submicron
MOSFET modeling |
- |
10. |
D. Jena & S. Ghosh |
1998 |
Design of a pipelined ADC |
- |
11. |
R. Ranjan & V. Gupta |
1998 |
Approached to design
automation: a case study |
- |
12. |
A. Kumar & S. Bhardwaj |
1999 |
Resonant tunneling devices |
- |
13. |
A. Agarwal & M. Garg |
2000 |
Digital system design
using Verilog HDL |
- |
14. |
T. Gupta & B. Tripathi |
2000 |
Digital system design
using VHDL |
- |
15. |
S. Shankar & S. K.
Kolluri |
2004 |
Mobility degradation due
to remote coulomb scattering in ultrathin gate oxide MOSFETs |
- |
16. |
H. Mehta & S. Mishra |
2005 |
Modeling of the gate
leakage current in sub-micron sized MOSFETs with high-k gate dielectrics |
- |
17. |
A. Nigam & A.
Khandelwal |
2005 |
Study of temperature
dependence of MOSFET device characteristics in 4H- and 6H-SiC and a new
thermal model for MOSFET fabricated on 6H-SiC |
- |
18. |
A. Agarwal & V.
Tripathi |
2006 |
Analysis of ultra-low
standby voltage SRAM cells – an SOI perspective |
- |
19. |
Prateek Mishra & Vivek
Joshi |
2006 |
Low power clock
distribution |
- |
20. |
S. Dongaonkar & N.
Rastogi |
2007 |
Design and optimization of
low power current op-amp (COA) |
- |
21. |
S. Lahoti & S. Agarwal |
2008 |
Study of band structure
and modeling of electron mobility in strained-Si/SiGe devices |
- |