Sarang Ingole

(PhD, Arizona State University, Tempe, Arizona, USA)

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Dr. Sarang Ingole

Associate Professor
Photovoltaic and Energy Storage Materials
Materials Science and Engg.
IIT Kanpur
Kanpur, U.P., 208016
Ph: +91-512-259-(7089)
Email: sarang[at]iitk.ac.in

Publications

Patents



"Ordered array of nanopore formation in aluminum thin-films using self-assembled monolayer of polystyrene microspheres and two types of anodic-oxidation"
Patent Application No: 2543/DEL/2013 Dated: 30.04.2013
Inventors Name: Dr. Sarang Ingole (MSE) Mr. Rajib (Alumni) Halder and Dr. Bhaskar (Alumni) Dudem


Publications



  1. "n-Type Iron-Pyrite (FeS2) Thin-Films Obtained at Different Sulfur Vapor Pressures", R. P. Srivastava, A. P. Saxena, S. Ingole, Chalcogenide Letters Vol. 14, No. 6, (2017) 227-237.
  2. "Effects of Alloying on Band gap and Morphology of Iron Pyrite Nanoparticles", A. P. Saxena, R. P. Srivastava, S. Ingole, Materials Letters 207 (2017) 202-205.
  3. "Structural and Optical Properties of (AgxCu1-x)2ZnSnS4 Thin Films Synthesised via Solution Route", Jitendra Kumar, S. Ingole, Journal of Alloys and Compounds 727 (2017) 1089-1094.
  4. "Effect of Silicon Conductivity and HF/H2O2 ratio on the Morphology of Silicon Nanostructures obtained via Metal-assisted Chemical Etching", Jitendra Kumar, S. Ingole, Journal of Electronic Materials  47 (2018) 1583 - 1588.
  5. "Evolution of the Microstructural, Electrical and Optical Characteristics of Sol-Gel derived Cu2ZnSnS4 Thin Films during Sulfurization", Jitendra Kumar, S. Ingole, Materials Science in Semiconductor Processing  91 (2019) 31 - 40.
  6. "Tailoring the Surface Morphology of Cu2ZnSnS4 Thin Films for Photovoltaic Application" Jitendra Kumar, S. Ingole, Materials Science in Semiconductor Processing  93 (2019) 173 - 181
  7. "Effect of Cation Ratios and Monoethanolamine on the Morphology of Solution Processed Cu2ZnSnS4 Films", Jitendra Kumar, S. Ingole, MRS Advances 4(16) (2019) 945-951.
  8. "An investigation on the phase purity of iron pyrite (FeS2) thin films obtained from the sulfurization of hematite (Fe2O3) thin films", R. P. Srivastava, S. Ingole, Materials Science in Semiconductor Processing, 106 (2020) 104775
  9. "Scalable fabrication and electrical contact formation process for vertically oriented silicon nanopillars in trenches", Jitendra Kumar, S. Ingole, Materials Science in Semiconductor Processing  122 (2021) 105470
  10. "Optical Phonons in Pentanary Compound (AgxCu1-x)2ZnSnS4 Semiconductor: A Raman Study", Jitendra Kumar, S. Ingole, Journal of Alloys and Compounds 865 (2021) 158113

    Free download link; active till March 31 2021


Conference Papers



Conference Posters



  • Fabrication of silicon nanowire-based device platform using deep reactive ion etching, Jitendra Kumar, S. Ingole, 4th International Conference on Emerging Electronics, Royal Orchid Convention Center, Bengaluru, India, December 2018, Received Best Poster Award.

Publications Prior to joining IITK



  • S. Ingole, P. Manandhar, J. A. Wright, E. Nazaretski, J. D. Thompson, and S. T. Picraux, Electrodeposition and Magnetic properties of Nickel on Silicon Nanowires, Applied Physics Letters 94, 223118 (2009).
  • S. Ingole, P. Manandhar, Satish B. Chikkannanavar, E. A. Akhadov, and S. T. Picraux, Charge Transport Characteristics of Ex-situ Boron Doped Si Nanowires, IEEE Transactions on Electron Devices 55, 2931 (2008).
  • S. Ingole, P. Aella, P. Manandhar, Satish B. Chikkannanavar, E. A. Akhadov, D. J. Smith, and S. T. Picraux, Ex-situ Doping of Silicon Nanowires with Boron, Journal of Applied Physics 103, 104302 (2008).
  • S. Ingole, P. Aella, S. J. Hearne, and S. T. Picraux, Directed Assembly of Nanowire Contacts using Electrodeposition, Applied Physics Letters 91, 033106 (2007).
  • P. Aella, S. Ingole, W. T. Petuskey, and S. T. Picraux, Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence, Advanced Materials 19, 2603 (2007).
  • T. Clement, S. Ingole, S. Ketharanathan, Jeff Drucker, and S. T. Picraux, In Situ Studies of Semiconductor Nanowire Growth using Optical Reflectometry, Applied Physics Letters 89, 163125 (2006).