2024
39) Shubhangi Saini, Ashok P, and Amit Verma, “Dynamic Multi Color Switching using Ultrathin Vanadium Oxide on Aluminium based Asymmetric Fabry-Perot Resonant Structure”,
Applied Physics Letters 124, 011105 (2024). [Selected as a featured article by APL]
Link
2023
38) Achintya Dutta, Ashok P, and Amit Verma, “Bilayer vanadium dioxide thin film with elevated transition temperatures and high resistance switching”,
Journal of Applied Physics 134, 145306 (2023).
Link
37) Ashok P, Yogesh Singh Chauhan, and Amit Verma, “Low temperature synthesis of VO2 and hysteresis free VOx thin films with high temperature coefficient of resistance for bolometer applications”,
Thin Solid Films 781, 139975 (2023).
Link
36) Hemadri Bandhu, Ashok P, Durga Prasad Khandapu, and Amit Verma, “Lithography-free Fabrication of Vanadium Dioxide and its Devices using Direct Laser Writing”,
Optics and Laser Technology 167, 109673 (2023).
Link
35) Gavax Joshi, Yogesh Singh Chauhan, and Amit Verma, “Investigation of growth dynamics of β-Ga2O3 LPCVD by independently controlling Ga precursor and substrate temperature”,
Japanese Journal of Applied Physics 62, SF1017 (2023).
Link
34) Abhinav Arya, Abhishek Chanekar, Amit Verma, and Sandeep Anand,
“Multiple Points Measurement Based Junction Temperature Estimation of IGBT Module”, IEEE Journal of Emerging and Selected Topics in Power Electronics 11, 3457 (2023).
Link
2022
33) Amit Verma and Raj Ganesh Pala, “Practical semiconductor physics perspective of materials photoelectrochemistry”,
Current Opinion in Electrochemistry 36, 101160 (2022).
Link
32) Ashok P, Yogesh Singh Chauhan, and Amit Verma, “Multi spectral switchable infra-red reflectance resonances in highly subwavelength partially oxidized vanadium thin films",
Optical Materials 132, 112854 (2022).
Link
31) Amol D. Gaidhane, Raghvendra Dangi, Shubham Sahay, Amit Verma, and Yogesh Singh Chauhan, “A Computationally Efficient Compact Model for Ferroelectric Switching with Asymmetric Non-Periodic Input Signals”,
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (2022).
Link
30) Shreyansh Yadav, Maaroof Abdul Kareem, Hari Krishna Kodali, Daksh Agarwal, Ashish Garg, Amit Verma, and Kanwar Singh Nalwa, “Optoelectronic modeling of all-perovskite tandem solar cells with design rules to achieve >30% efficiency”,
Solar Energy Materials and Solar Cells 242, 111780 (2022).
Link
29) Rustam Kumar, Arnab Sarkar, Sandeep Anand, Amit Verma, and Tian-Li Wu,
“H-Bridge Derived Topology for Dynamic on-resistance Evaluation in Power GaN HEMTs”, IEEE Transactions on Industrial Electronics 70, 1532 (2022).
Link
2021
28) Kshitiz Tyagi, Amit Verma, and Aloke K. Dutta, “Modeling of the Gate Tunneling Current in MFIS NCFETs”,
IEEE Transactions of Electron Devices 68, 5886 (2021).
Link
27) Amol D. Gaidhane, Amit Verma, and Yogesh Singh Chauhan, “Study of multi-domain switching dynamics in negative capacitance FET using SPICE model",
Microelectronics Journal 115, 105186 (2021).
Link
26) Gavax Joshi, Yogesh Singh Chauhan, and Amit Verma, “Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition”,
Journal of Alloys and Compounds 883, 160799 (2021).
Link
25) Ashok P, Yogesh Singh Chauhan, and Amit Verma, “Effect of Vanadium Thickness and Deposition Temperature on VO2 Synthesis using Atmospheric Pressure Thermal Oxidation”,
Thin Solid Films 724, 138630 (2021).
Link
24) Abhinav Arya, Abhishek Chanekar, Pratik Deshmukh, Amit Verma, and Sandeep Anand,
“Accurate Online Junction Temperature Estimation of IGBT using Inflection Point Based Updated I-V Characteristics”, IEEE Transactions on Power Electronics 36, 9826 (2021).
Link
2020
23) Ashok P, Yogesh Singh Chauhan, and Amit Verma, “High infrared reflectance modulation in VO2 films synthesized on glass and ITO coated glass substrates using atmospheric oxidation of vanadium”,
Optical Materials 110, 110438 (2020).
Link
22) Amol D. Gaidhane, Girish Pahwa, Avirup Dasgupta, Amit Verma, and Yogesh Singh Chauhan,
“Compact Modeling of Surface Potential, Drain Current and Terminal Chargesin Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport”,
IEEE Journal of the Electron Devices Society 8, 1168 (2020).
Link
21) Ashok P, Yogesh Singh Chauhan, and Amit Verma, “Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation”,
Thin Solid Films 706, 138003 (2020).
Link
20) Amol D. Gaidhane, Girish Pahwa, Amit Verma, and Yogesh Singh Chauhan,
“Gate Induced Drain Leakage in Negative Capacitance FinFETs”, IEEE Transactions of Electron Devices 67, 802 (2020).
Link
2019
19) Bushara Fatma, Ritamay Bhunia, Shashikant Gupta, Amit Verma, Vivek Verma, and Ashish Garg,
“Maghemite/Polyvinylidene Fluoride Nanocomposite for Transparent, Flexible Triboelectric Nanogenerator and Noncontact Magneto-Triboelectric Nanogenerator”,
ACS Sustainable Chem. Eng. 7, 17, 14856-14866 (2019).
Link
18) Avirup Dasgupta, Amit Verma, and Yogesh Singh Chauhan,
“Analysis and Compact Modeling of Insulator-Metal-Transition Material based PhaseFET Including Hysteresis and Multi-domain Switching”,
IEEE Transactions of Electron Devices 66, 169 (2019).
Link
2018
17) Amol D. Gaidhane, Girish Pahwa, Amit Verma, and Yogesh Singh Chauhan,
“Compact Modeling of Drain Current, Charges and Terminal Capacitances in the Gate-All-Around Negative Capacitance MFIS Transistor”,
IEEE Transactions of Electron Devices 65, 2024 (2018).
Link
16) Jimy Encomendero, Rusen Yan, Amit Verma, SM Islam, Vladimir Protasenko, Sergei Rouvimov, Patrick Fay,
Debdeep Jena, and Huili Grace Xing, “Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities
up to 220 kA/cm2”, Appl. Phys. Lett. 112, 103101 (2018).
Link
15) Amit Verma, Bo Song, Brian Downey, Virginia Wheeler, David J. Meyer, Huili (Grace) Xing, and Debdeep Jena,
“Steep sub-Boltzmann switching in AlGaN/GaN Phase-FETs with ALD VO2” IEEE Transactions of Electron Devices 65, 945 (2018).
Link
2017
14) Hanjong Paik, Zhen Chen, Edward Lochocki, Ariel Seidner H., Amit Verma, Nicholas Tanen,
Jisung Park, Masaki Uchida, ShunLi Shang, Bi-Cheng Zhou, Mario Brutzam, Reinhard Uecker, Zi-Kui Liu, Debdeep Jena, Kyle M. Shen,
David A. Muller, and Darrell G. Schlom, “Adsorbtion-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy”, APL Materials 5, 116107 (2017).
Link
13) Liheng Zhang, Amit Verma, Huili (Grace) Xing, and Debdeep Jena,
“Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3”, Jpn. J. Appl. Phys. 56, 030304 (2017).
Link
2012-2016
12) Nan Ma, Nicholas Tanen, Amit Verma, Zhi Guo, Tengfei Luo, Huili (Grace) Xing, and Debdeep Jena,
“Intrinsic electron mobility limits in β-Ga2O3”, Appl. Phys. Lett. 109, 212101 (2016).
Link
11) Amit Verma, Kazuki Nomoto, Wan Sik Hwang, Santosh Raghavan, Susanne Stemmer and Debdeep Jena,
“Large Electron Concentration Modulation Using Capacitance Enhancement in SrTiO3/SmTiO3 Fin-field effect transistors”,
Appl. Phys. Lett. 108, 183509 (2016).
Link
10) Amit Verma, Santosh Raghavan, Susanne Stemmer and Debdeep Jena,
“Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films”, Appl. Phys. Lett. 107, 192908 (2015).
Link
9) Lars Bjaalie, Amit Verma, Burak Himmetoglu, Anderson Janotti,
Santosh Raghavan, Vladimir Protasenko, Elizabeth Steenbergen, Debdeep Jena, Susanne Stemmer and
Chris G. Van de Walle, “Determination of the Mott-Hubbard gap in GdTiO3”, Phys. Rev. B 92, 085111 (2015).
Link
8) Zhi Guo, Amit Verma, Xufei Wu, Fangyuan Sun, Austin Hickman#, Takekazu Masui,
Akito Kuramata, Masataka Higashiwaki, Debdeep Jena and Tengfei Luo, “Anisotropic Thermal Conductivity in Single
Crystal β-Gallium Oxide”, Appl. Phys. Lett. 106, 111909 (2015).
Link
7) Amit Verma, Santosh Raghavan, Susanne Stemmer and Debdeep Jena,
“Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation”,
Appl. Phys. Lett. 105, 113512 (2014).
Link
6) Amit Verma, Adam P. Kajdos, Tyler A. Cain, Susanne Stemmer and Debdeep Jena,
“Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate”, Phys. Rev. Lett. 112, 216601 (2014).
Link
5) Pei Zhao, Amit Verma, Jai Verma, Patrick Fay, and Debdeep Jena,
“GaN Heterostructure Barrier Diodes (HBD) with Polarization-Induced Delta Doping”, IEEE Electron Dev. Lett. 35, 615 (2014).
Link
4) Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov,
Huili Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Robert Fornari,
and Debdeep Jena, “High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes”,
Appl. Phys. Lett. 104, 203111 (2014).
Link
3) Guowang Li, Ronghua Wang, Bo Song, Jai Verma, Yu Cao, Satyaki Ganguly,
Amit Verma, Jia Guo, Huili Grace Xing, Debdeep Jena, “Polarization-Induced GaN-on-Insulator
E/D Mode p-Channel Heterostructure FETs”, IEEE Electron Dev. Lett. 34, 852 (2013).
Link
2) Jai Verma, Prem Kumar Kandaswamy, Vladimir Protasenko,
Amit Verma, Huili Grace Xing, and Debdeep Jena “Tunnel-injection
GaN quantum dot ultraviolet light-emitting diodes”, Appl. Phys. Lett. 102, 041103 (2013).
Link
1) Aniruddha Konar, Amit Verma, Tian Fang, Pei Zhao,
Raj Jana, and Debdeep Jena, “Charge transport in non-polar and semi-polar III-V nitride
heterostructures”, Semicond. Sci. Technol. 27, 024018 (2012).
Link
