In journals (selected)

  • "Monte Carlo Simulation Studies of Spin Transport in Single-Layer Graphene", Bahniman Ghosh and Soumya Misra, in Journal of Applied Physics, 110, 043711, (August 2011).
  • "Spin Transport in bi-layer graphene", Bahniman Ghosh, Journal of Applied Physics, 109, 013706 (January 2011).
  • "The Role of Electron Electron Scattering in Spin Transport", Akashdeep Kamra and Bahniman Ghosh, Journal of Applied Physics, 109, 024501 (January 2011)
  • "Data retention modeling of nanocrystalline flash memories: A Monte Carlo approach", B.Ghosh, H. Liu, B. Winstead, M.Foisy and S.K.Banerjee, Solid State electronics, Volume 54, Issue 11, November 2010, Pages 1295-1299
  • "Spin relaxation due to electron-electron magnetic interaction in high Lande g-factor semiconductors" Akashdeep Kamra, Bahniman Ghosh and Tarun K. Ghosh, Journal of Applied Physics 108, 054505 (September 2010)
  • "Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa", Xiao-Feng Fan; Register, L.F.; Winstead, B.; Foisy, M.C.; Wanqiang Chen; Xin Zheng; Ghosh, B.; Banerjee, S.K. In IEEE Transactions on Electron Devices, Feb. 2007, vol.54, no.2, pp. 291-6.
  • "Monte Carlo Study of Strained Germanium Nanoscale Bulk pMOSFETs", B. Ghosh, X. -F. Fan, L. F. Register, S. K. Banerjee, IEEE Transactions on Electron Devices, Volume 53, Issue 3, March 2006 Page(s):533 - 537
  • "Monte Carlo Study of remote coulomb and remote surface roughness scattering in Germanium PMOSFETs with ultrathin high-k dielectrics", B. Ghosh, X.F. Fan, L.F. Register and S. Banerjee, Solid-State Electronics, Volume 50, Issue 2, February 2006, Pages 248-253
  • "Monte Carlo Study of Germanium N- and P- MOSFETs", B. Ghosh, X. Wang, X. F. Fan, L.F. Register and S.Banerjee, IEEE Transactions on Electron Devices, Volume 52, Issue 4, April 2005, Page(s):547 - 553.

In conference (selected)

  • "Neural Network Modeling of Solar Cells," Himanshu Gupta, Bahniman Ghosh and Sanjay Banerjee, Nanotech Malaysia, 2010, International Conference on Enabling Science and NanoTechnology, Kuala Lumpur, Malaysia.
  • "Device and circuit performance evaluation and improvement and optimization of SiGe tunnel FETs", Rahul Mishra, Bahniman Ghosh and Sanjay K. Banerjee, Nanotech Malaysia, 2010, International Conference on Enabling Science and NanoTechnology, Kuala Lumpur, Malaysia.
  • "Data retention modeling of nanocrystalline flash memories: A Monte Carlo approach," B.Ghosh, H. Liu, B. Winstead, M.Foisy and S.K.Banerjee, IEEE, ICSE, 2010, Melaka, Malaysia
  • "Monte Carlo Study of Remote Coulomb and Remote Surface Roughness Scattering in Nanoscale Ge p-MOSFETs with Ultrathin High-Κ Dielectrics"; B. Ghosh, X.-F. Fan, L.F. Register, S.K. Banerjee, SISPAD, Monterey, USA; 09-06-2006 - 09-08-2006; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 170 - 172.
  • "Scalability of Biaxially Strained Si NMOS on Technology Roadmap", X. Fan, L.F. Register, B. Ghosh, S.K. Banerjee, B. Winstead, U. Ravaioli. SISPAD, Monterey, USA; 09-06-2006 - 09-08-2006; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 232 - 235.
  • " Monte Carlo Study of Germanium N- and P- MOSFETs", B. Ghosh, X. F. Fan, L.F. Register and S.Banerjee, 63rd Device Research Conference, IEEE, June 20-25, 2005, Page(s):81 - 82
  • "Monte Carlo Study of Germanium PMOSFETs", B. Ghosh, X. F. Fan, L.F. Register and S.Banerjee, SRC Techcon, October 23 -27, 2005.