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Books:
1. Title: FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard (Second Edition)
Authors: Yogesh Singh Chauhan, Girish Pahwa, Avirup Dasgupta, Darsen Lu, Sriram Venugopalan, Sourabh Khandelwal, Juan P. Duarte, Navid Paydavosi, Ali M. Niknejad, and Chenming Hu
Publisher: Academic Press, Elsevier
ISBN: 978-0-323-95729-8
Year: 2024

2. Title: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model
Authors: Yogesh Singh Chauhan, Sheikh Aamir Ahsan, and Ahtisham Ul Haq Pampori
Publisher: Woodhead Publishing, Elsevier
ISBN: 978-0-323-99871-0
Year: 2024

3. Title: BSIM-Bulk MOSFET Model for IC Design- Digital, Analog, RF and High-Voltage
Authors: Harshit Agarwal, Chetan Gupta, Yogesh Singh Chauhan, and Chenming Hu
Publisher: Woodhead Publishing, Elsevier
ISBN: 978-0-323-85677-5
Year: 2023

4. Title: Industry Standard FDSOI Compact Model BSIM-IMG For IC Design
Authors: Chenming Hu, Sourabh Khandelwal, Yogesh S. Chauhan, Thomas Mckay, Juan Pablo Duarte, Pragya Kushwaha, Harshit Agarwal
Publisher: Woodhead Publishing, Elsevier
ISBN: 9780081024010
Year: 2019

5. Title: FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard
Authors: Yogesh Singh Chauhan, Darsen Lu, Sriram Venugopalan, Sourabh Khandelwal, Juan P. Duarte, Navid Paydavosi, Ali M. Niknejad, and Chenming Hu
Publisher: Academic Press, Elsevier
ISBN: 9780124200319
Year: 2015

Book Chapters:
1. Chapter title: Modeling of High Voltage MOSFETs Based on EKV (HV-EKV) in the book POWER/HVMOS Devices Compact Modelling
Authors: Yogesh Singh Chauhan, Francois Krummenacher, and Adrian Mihai Ionescu
Publisher: Springer
ISBN: 978-90-481-3045-0
Year: 2010

2. Chapter title: Progress in Two-dimensional Ferroelectrics and Potential Applications in the book 2D Semiconducting Materials for Electronic, Photonic, and Optoelectronic Devices
Authors: Ateeb Naseer, Yogesh Singh Chauhan, Amit Agarwal, Somnath Bhowmick
Publisher: CRC Press
ISBN: 9781003439448
Year: 2024

Patents Granted:
  1. Patent No.- 437210 - "A Power Amplifier Design to Compensate Frequency Dependent Behavior"
    Neha Bajpai and Yogesh Singh Chauhan, December 2021, Indian Patent Office.
  2. Patent No.- 540950 - "System for Temperature-Compensated Biasing Circuit Integrated with Amplifier by Utilizing GaAa-based HEMTs"
    Neha Bajpai and Yogesh Singh Chauhan, June 2024, Indian Patent Office.


Publications: Check publications on Researchgate and Google Scholar.
  • Google Scholar Link
    • Google Scholar Profile of Yogesh Chauhan

    2025:
      Journal Articles:
    1. S. S. Parihar, G. Pahwa, B. Mohammad, Y. S. Chauhan, and H. Amrouch, "Novel Trade-offs in 5nm FinFET SRAM Arrays at Extreme Low Temperatures", under revision in IEEE Transactions on Quantum Engineering, 2025.
    2. K. Nandan, A. Naseer, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling", IEEE Transactions on Electron Devices, 2025.
    3. W. Manjoor, A. K. Dutta, and Y. S. Chauhan, "A Comprehensive Study of Threshold Voltage Extraction Techniques from Room to Cryogenic Temperatures", IEEE Journal of the Electron Devices Society, 2025.
    4. M. Rafiq, Y. S. Chauhan, and S. Sahay, "Compact XOR/XNOR-based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs", IEEE Journal of the Electron Devices Society, 2025.
    5. R. Dangi, A. Pampori, P. Pal, and Y. S. Chauhan, "A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-band RF Applications", IEEE Transactions on Electron Devices, 2025.
    6. S. K. Singh, T.-L. Wu, and Y. S. Chauhan, "Demonstration of Gate-related Trap Characterization in 4H-SiC MOSFETs using Gate Stress Leakage Current", IEEE Journal of the Electron Devices Society, 2025.
    7. D. Nandi, C. K. Dabhi, D. Rajasekharan, N. Karumuri, S. Turuvekere, B. Swaminathan, S. Srihari, A. Dutta, C. Hu, and Y. S. Chauhan, "Utilizing Symmetric BSIM-SOI SPICE model for Dynamically Depleted RF SOI T/R Switches and Logic Circuits", IEEE Journal of the Electron Devices Society, 2025.
    8. A. Mishra, R. Jaiswal, K. V. Srivastava, Y. S. Chauhan, and A. Verma, "Switchable and Tunable Salisbury Screen Microwave Absorber based on a Uniform Vanadium Dioxide Film", IEEE Antennas and Wireless Propagation Letters, 2025.
      9. Conference Papers:

    2024:
      Journal Articles:
    1. A. Naseer, Y. S. Chauhan, A. Agarwal, and S. Bhowmick "Harnessing Room-Temperature Ferroelectricity in Metal Oxide Monolayers for Advanced Logic Devices", Journal of Applied Physics, Vol. 136, Issue 17, pp. 174301, Nov. 2024.
    2. D. Nandi, C. K. Dabhi, D. Rajasekharan, N. Karumuri, S. Turuvekere, S. Choppalli, A. S. Pratiyush, C. Hu, and Y. S. Chauhan, "Physical Insights and Accurate Modeling of Transconductance in Body-contacted Dynamically Depleted SOI MOSFETs", IEEE Transactions on Electron Devices, Vol. 71, Issue 11, pp. 6506-6513, Nov. 2024.
    3. N. Pandey, Y. S. Chauhan, L. F. Register, and S. K. Banerjee, "Multi-Domain Dynamics and Ultimate Scalability of CMOS-Compatible FeFETs", IEEE Electron Device Letters, Vol. 45, Issue 1, pp. 2098-2101, Nov. 2024.
    4. S. K. Singh, N. T. Sao, T.-L. Wu, and Y. S. Chauhan, "Characterization and Modeling of the Mobility, Threshold Voltage, and Subthreshold Swing in p-GaN gate HEMTs at Cryogenic Temperatures", Applied Physics Letters, Vol. 125, Issue 157, art. no. 152103, October 2024.
    5. M. S. Nazir, A. Naseer, S. A. Ahsan, and Y. S. Chauhan, "A Unified Charge-based SPICE-Compatible Flicker Noise Model for 2D-Material FETs", IEEE Transactions on Electron Devices, Vol. 71, Issue 10, pp. 6452-6455, October 2024.
    6. A. Naseer, A. Priydarshi, P. Ghosh, R. Ahammed, Y. S. Chauhan, S. Bhowmick, and A. Agarwal, "Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers", Nanoscale, Vol. 16, Issue 25, pp. 12107-12117, 2024.
    7. S. Kumar, Y. S. Chauhan, and H. Amrouch "Thermal Effects on Monolithic 3D Ferroelectric Transistors for DNN Performance", Advanced Intelligent Systems, Vol. 6, Issue 8, August 2024.
    8. M. Rafiq, Y. S. Chauhan, and S. Sahay, "Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection", IEEE Journal of the Electron Devices Society, Vol. 12, pp. 516-524, August 2024.
    9. W. Manzoor, A. K. Dutta, G. Pahwa, N. Manzoor, C. Hu, and Y. S. Chauhan, "Extending Standard BSIM-BULK Model to Cryogenic Temperatures", IEEE Transactions on Electron Devices, Vol. 71, Issue 8, pp. 4510-4516, August 2024.
    10. S. Chatterjee, S. Kumar, A. Gaidhane, C. K. Dabhi, Y. S. Chauhan, and H. Amrouch, "Temperature- and Variability-Aware Compact Modeling of Ferroelectric FDSOI FET for Memory and Emerging Applications", Solid State Electronics, Vol. 218, art no. 108954, August 2024.
    11. Ashok P, Y. S. Chauhan, and A. Verma, "Flexible Vanadium Dioxide Films and Devices on Kapton Fabricated with Low Temperature Atmospheric Oxidation of Vanadium", IEEE Journal on Flexible Electronics, Vol. 3, Issue 8, pp. 368-373, August 2024.
    12. M. Zaid, P. Kumari, M. S. Nazir, A. Pampori, U. Goyal, M. Mishra, and Y. S. Chauhan, "GaN low noise amplifier MMIC with LPF and HPF noise matching", Microelectronic Engineering, Vol. 291, art. no. 112199, August 2024.
    13. N. Pandey, Y. S. Chauhan, L. F. Register, and S. K. Banerjee, "Dynamics of Domains and its Impact on Gate Tunneling in CMOS-Compatible FeFETs", IEEE Electron Device Letters, Vol. 45, Issue 7, pp. 1177-1180, July 2024.
    14. M. Rafiq, S. Chatterjee, S. Kumar, Y. S. Chauhan, and S. Sahay, "Utilizing Dual-Port FeFETs for Energy-Efficient Binary Neural Network Inference Accelerators", IEEE Transactions on Electron Devices, Vol. 17, Issue 7, pp. 4381-4388, July 2024.
    15. N. Pandey, Y. S. Chauhan, L. F. Register, and S. K. Banerjee, "2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multi-Domain Effects: Predictive Insights and Design Optimization", IEEE Transactions on Electron Devices, Vol. 17, Issue 7, pp. 4347-4354, July 2024.
    16. F.-X. Liang, S. Kumar, K. Ni, W. Chakraborty, Y. S. Chauhan, H. Amrouch, S. Datta, M. Niemier, and X. S. Hu, "A Physics-Based Model for BEOL Compatible Ferroelectric Field-Effect Transistors", IEEE Transactions on Electron Devices, Vol. 17, Issue 7, pp. 4397-4402, July 2024.
    17. A. Sharma, G. Pahwa, C. K. Dabhi, Y. H. Zarkob, R. Goel, H. Agarwal, V. Kubrak, M. Tang, M. Treiber, C. Hu, and Y. S. Chauhan, "Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors", IEEE Transactions on Electron Devices, Vol. 17, Issue 7, pp. 4240-4246, July 2024.
    18. M. Zaid, A. Pampori, M. S. Nazir, and Y. S. Chauhan, "Design and Experimental Validation of Class-F−1 GaN Power Amplifier using a Compact Harmonic Control Unit", Microelectronics Journal, Vol. 149, art. no. 106218, July 2024.
    19. N. Pandey and Y. S. Chauhan, "Static Negative Susceptibility in Ferromagnetic Material Induced by Domain wall: Possibility to Achieve Gigantic Diamagnetism", IEEE Transactions on Electron Devices, Vol. 71, Issue 6, pp. 3952-3958, June 2024.
    20. I. Ahamed, A. Chakraborty, P. Yadav, R. Dey, Y. S. Chauhan, S. Bhowmick, A. Agarwal, "Room Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-metallic Monolayer CrTe", ACS Applied Electronic Materials, Vol. 6, Issue 5, pp. 3810–3819, May 2024.
    21. A. Kar, S. S. Parihar, J. Z. Huang, H. Zhang, W. Wang, K. Imura and Y. S. Chauhan, "Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16-nm Technology Node SoCs", IEEE Journal of the Electron Devices Society, Vol. 12, pp. 415-425, April 2024.
    22. M. Zaid, P. Kumari, A. Pampori, M. S. Nazir, U. Goyal, M. Mishra and Y. S. Chauhan, "Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability", IEEE Access, Vol. 12, pp. 53475-53484, April 2024.
    23. C. K. Dabhi, D. Nandi, K. Nandan, D. Rajasekharan, G. Pahwa, N. Karumuri, S. Turuvekere, A. Dutta, B. Swaminathan, S. Srihari, Y. S. Chauhan, S. Salahuddin, C. Hu, "Symmetric BSIM-SOI – Part II: A Compact Model for Partially Depleted SOI MOSFETs", IEEE Transactions on Electron Devices, Vol. 71, Issue 4, pp. 2293-2300, April 2024.
    24. C. K. Dabhi, D. Rajasekharan, G. Pahwa, D. Nandi, N. Karumuri, S. Turuvekere, A. Dutta, B. Swaminathan, S. Srihari, Y. S. Chauhan, S. Salahuddin, C. Hu, "Symmetric BSIM-SOI – Part I: A Compact Model for Dynamically Depleted SOI MOSFETs", IEEE Transactions on Electron Devices, Vol. 71, Issue 4, pp. 2284-2292, April 2024.
    25. M. Zaid, A. Pampori, M. S. Nazir, and Y. S. Chauhan, "GaN-based Wide-Band High-Efficiency Power Amplifier with Multi Harmonic Resonance", Microelectronics Journal, Vol. 145, art. no. 106129, March 2024.
    26. S. K. Singh, T.-L. Wu, and Y. S. Chauhan, "A Self-Consistent Approach based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔVTH Transients in p-GaN gate Power HEMTs", IEEE Transactions on Electron Devices, Vol. 71, Issue 3, pp. 1820-1826, March 2024.
    27. S. Kumar, S. Thomann, O. Prakash, K. Ni, Y. S. Chauhan, and H. Amrouch, "Comprehensive Modeling of Switching Behaviour in BEOL FeFET for Monolithic 3D Integration", IEEE Transactions on Electron Devices, Vol. 71, Issue 1, pp. 368-373, January 2024.
    28. S. K. Singh, B.-R. Chen, Z.-H. Huang, T.-L. Wu, and Y. S. Chauhan, "Trapping / Detrapping Kinetic Modeling under Positive / Negative Gate Stress including Inhibition Dynamics in 4H-SiC MOS Capacitors", IEEE Transactions on Electron Devices, Vol. 71, Issue 1, pp. 200-205, January 2024.
    29. A. Pampori, M. S. Nazir, R. Dangi, M. L. Chou, G. Y. Lee, and Y. S. Chauhan, "A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch with OFF-state Harmonic Control", IEEE Transactions on Electron Devices, Vol. 71, Issue 1, pp. 84-90, January 2024.
    30. A. Kar, S. S. Parihar, J. Z. Huang, H. Zhang, W. Wang, K. Imura, and Y. S. Chauhan, "Characterization and Modeling of 14nm/16nm FinFET Based LDMOS Transistors", IEEE Transactions on Electron Devices, Vol. 71, Issue 1, pp. 62-69, January 2024.
    31. Y. S. Chauhan, "Guest Editorial Special Issue on Semiconductor Device Modeling for Circuit and System Design", IEEE Transactions on Electron Devices, Vol. 71, Issue 1, pp. 7-10, January 2024.
      32. Conference Papers:
    32. A. Kar, Y. S. Chauhan, and H. Amrouch, "Innovations in Hardware Security: Leveraging FeFET Technology for Future Opportunities", IEEE Asia Pacific Conference on Circuits and Systems, Taipei, Taiwan, Nov. 2024.
    33. A. Naseer, Y. H. Zarkob, M. Rafiq, M. S. Nazir, O. Ahmad, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Enhancing the Capabilities of Quantum Transport Simulations Utilizing Machine Learning Strategies", ACM/IEEE International Symposium on Machine Learning for CAD (MLCAD), Snowbird, USA, Sept. 2024.
    34. A. Sharma, A. Pampori, M. Tang, R. Goel, M. Ahmed, V. Kubrak, C. Hu, and Y. S. Chauhan, "An Improved Overlap Capacitance Model for LDMOS Transistors based on the BSIM-BULK Framework", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Jose, USA, September 2024.
    35. B. Hien, M. Walter, V. M. van Santen, F. Klemme, S. S. Parihar, G. Pahwa, Y. S. Chauhan, H. Amrouch, and R. Wille, "Technology Mapping for Cryogenic CMOS Circuits", IEEE Computer Society Annual Symposium on VLSI (ISVLSI), July, 2024.
    36. B.-N. Chu, K.-H. Lam, S. K. Singh, Y. S. Chauhan, H.-M. Chen, C.-H. Yen, and T.-L. Wu, "Investigations of Trapping and De-trapping Phenomena with Positive and Negative Gate Bias in β-Ga2O3 MOSCAPs with ALD Al2O3 Gate Dielectric", 7th International Workshop on UV Materials and Devices (IWUMD 2024), Taipei, Taiwan, June, 2024.
    37. M. Rafiq, M. S. Nazir, S. Chatterjee, Y. S. Chauhan, and S. Sahay, "A SPICE-Compatible Model for Ferroelectric GaN HEMTs", 82nd Device Research Conference (DRC), Washington DC, USA, June 2024.
    38. A. Naseer, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Hybrid FETs Based on Monolayer ZrI2 for Energy-Efficient Logic Applications", 82nd Device Research Conference (DRC), Washington DC, USA, June 2024.
    39. N. Pandey, Y. S. Chauhan, L. F. Register, and S. K. Banerjee, "Impact of Multi-Domain on Ferroelectric Tunnel Junction Design Metrics", 82nd Device Research Conference (DRC), Washington DC, USA, June 2024.
    40. N. Pandey, Y. S. Chauhan, L. F. Register, and S. K. Banerjee, "Impact of Multi-Domain Microscopic Interactions on Magnetic Tunnel Junction’s Static and Transient Characteristics", 82nd Device Research Conference (DRC), Washington DC, USA, June, 2024.
    41. A. Kar, F. Klemme, Y. S. Chauhan, and H. Amrouch, "On the Severity of Self-Heating in FDSOI at Cryogenic Temperatures: In-depth analysis from Transistors to Full Processor", IEEE International Reliability Physics Symposium (IRPS), Dallas, USA, April 2024.
    42. S. S. Parihar, G. Pahwa, Y. S. Chauhan, and H. Amrouch, "Impact of Self-Heating in 5 nm FinFETs at Cryogenic Temperatures for Reliable Quantum Computing: Device-Circuit Interaction", IEEE International Reliability Physics Symposium (IRPS), Dallas, USA, April 2024.
    43. M. H. Ansari, A. Jarndal, Y. S. Chauhan, "Verilog-A Based ANN Large Signal Modeling of GaN HEMTs", 6th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE), Sharjah, UAE, April 2024.
    44. A. Sharma, S. S. Parihar, Y. H. Zarkob, W. Wang, K. Imura, P. Dwivedi, and Y. S. Chauhan, "Characterization and Experimental Validation of Self Heating in RF LDMOS Transistor using BSIM-BULK Model", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    45. W. Manzoor, A. K. Dutta, and Y. S. Chauhan, "Analysis and Modeling of Negative Transconductance in Zero-Threshold Voltage MOSFETs at Cryogenic Temperatures", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    46. P. Pal, R. Dangi, M. S. Nazir, P. Kumari, U. Goyal, S. Kumar, P. Singh, M. Mishra, and Y. S. Chauhan, "Scalable GaN-HEMT Model for X-band RF Applications", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    47. D. Nandi, C. K. Dabhi, D. Rajasekaran, N. Karumuri, S. Turuvekere, B. Swaminathan, S. Srihari, A. Dutta, C. Hu, and Y. S. Chauhan, "Validation of Dynamically Depleted Symmetric BSIM-SOI Compact model for RF SOI T/R Switch Applications", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    48. S. Kumar, Y. S. Chauhan, and H. Amrouch, "Monolithic 3D Integration using BEOL FeFET: Reliability, Thermal Effects, and DNN Accuracy", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    49. S. Chatterjee, N. Baruah, S. Deshwal, A. Kar, S. S. Parihar, Y. S. Chauhan, and H. Amrouch, "Unveiling the Hidden Impact of Self-Heating on Ferroelectric FinFET and FDSOI based In-Memory Computing", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    50. S. Shahin, S. Kumar, S. Chatterjee, H. Amrouch, and Y. S. Chauhan, "Benchmarking IWO-based Logic Circuits for Monolithic 3D Integration", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    51. A. Mishra, Y. S. Chauhan, and A. Verma, "Comparative Analysis of Switching Efficiency of GeTe and VO2 based RF Switches", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    52. V. N. Bhukya, R. Dey, and Y. S. Chauhan, "Position-dependent Voltage-controlled Switching of Perpendicular Ferromagnet on a Topological Insulator: A micromagnetic simulation study", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    53. Aayush, G. Pahwa, and Y. S. Chauhan, "Design Space Exploration of Negative Capacitance Effect in MFIM Structure: A 3D Phase Field Approach", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    54. A. Naseer, S. Bhowmick, A. Agarwal, and Y. S. Chauhan, "Monolayer HfS3: A Potential Candidate for Low-Power and High-Performance Field-Effect Transistors", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    55. S. S. Parihar, A. Kar, W. Wang, K. Imura, and Y. S. Chauhan, "Characterizing Analog Figure of Merits of 5nm Technology Node FinFETs from 10K to 400K", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    56. Y. H. Zarkob, A. Sharma, G. Pahwa, D. Nandi, C. K. Dabhi, V. Kubrak, B. Peddenpohl, M. Tang, C. Hu, and Y. S. Chauhan, "Compact Modeling and Experimental Validation of Reverse Mode Impact Ionization in LDMOS Transistors within the BSIM-BULK Framework", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    57. M. Zaid, P. Kumari, M. S. Nazir, U. Goyal, M. Mishra, and Y. S. Chauhan, "Design and Fabrication of X-band GaN LNA MMIC Using an Empirical Noise Model", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    58. M. Rafiq, Y. S. Chauhan, and S. Sahay, "Exploiting Single Ferroelectric FET for Efficient Implementation of Majority Gate Function for Approximate Computing", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    59. S. K. Singh, T.-L. Wu, and Y. S. Chauhan, "Gate Leakage Current analysis using Bayesian Deconvolution for Accurate Electron/Hole Trapping Characterizations in 4H-SiC MOSFETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    60. N. Bajpai and Y. S. Chauhan, "A GaN Low Noise Amplifier Design Using Numerical Optimization", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.
    61. M. S. Nazir, R. Dangi, M. Zaid, A. Pampori and Y. S. Chauhan, "Extension of ASM-HEMT Framework for Cryogenic Temperatures", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bengaluru, India, March 2024.

    2023:
      Journal Articles:
    1. M. Rafiq, T. Kaur, A. Gaidhane, Y. S. Chauhan, and S. Sahay, "Ferroelectric FET Based Time-Mode Multiply-Accumulate Accelerator: Design and Analysis", IEEE Transactions on Electron Devices, Vol. 70, Issue 12, pp. 6613-6621, December 2023.
    2. S. Kumar, O. Prakash, Y. S. Chauhan, and H. Amrouch, "BEOL FeFET SPICE-compatible Model for benchmarking 3D Monolithic In-Memory TCAM Computation", IEEE Transactions on Electron Devices, Vol. 70, Issue 12, pp. 6286-6292, December 2023.
    3. Z. Zhao, S. Deng, S. Chatterjee, Z. Jiang, M. S. Islam, Y. Xiao, Y. Xu, S. Meninger, M. Mohamed, R. Joshi, Y. S. Chauhan, H. Mulaosmanovic, S. Duenkel, D. Kleimaier, S. Beyer, H. Amrouch, V. Narayanan, and K. Ni, "Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET", ACS Applied Materials and Interfaces, Vol. 15, Issue 47, pp. 54602–54610, November 2023.
    4. S. Chatterjee, Y. S. Chauhan, and H. Amrouch, "Programmable Delay Element using Dual-Port FeFET for Post-Silicon Clock Tuning", IEEE Electron Device Letters, Vol. 4, Issue 11, pp. 1907-1910, November 2023. Highlighted on the Cover pageNEW.
    5. K. Nandan, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Two-dimensional semiconductors based Field-Effect Transistors: Review of Major Milestones and Challenges", Frontiers in Electronics, section Nano- and Microelectronics, Vol.4, 2023.
    6. T. Soliman, S. Chatterjee, N. Laleni, F. Muller, T. Kirchner, N. Wehn, T. Kampfe, Y. S. Chauhan, and H. Amrouch, "First Demonstration of In-Memory Computing Crossbar using Multi-level Cell FeFET", Nature CommunicationsNEW, 14, Art. No. 6348, October 2023.
    7. R. Dangi, A. Pampori, P. Pal, and Y. S. Chauhan, "Sub-circuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT", IEEE Transactions on Electron Devices, Vol. 70, Issue 10, pp. 5057-5064, October 2023.
    8. A. Priydarshi, A. Arora, Y. S. Chauhan, A. Agarwal, and S. Bhowmick, "Versatility of type-II van der Waals heterostructures: a case study with SiH-CdCl2", ACS Journal of Physical Chemistry C, Vol. 127, Issue 43, pp. 21279–21288, October 2023.
    9. A. Naseer, K. Nandan, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Performance Evaluation of Monolayer ZrS3 Transistors for Next-Generation Computing", IEEE Transactions on Electron Devices, Vol. 70, Issue 10, pp. 5435-5442, October 2023.
    10. D. Rajasekharan, N. Rangarajan, S. Patnaik, O. Sinanoglu, and Y. S. Chauhan, "SCANet: Securing the Weights with Superparamagnetic-MTJ Crossbar Array Networks", IEEE Transactions on Neural Networks and Learning Systems, Vol. 34, Issue9, pp. 5693-5707, September 2023.
    11. Ashok P, Y. S. Chauhan, and A. Verma, "Low Temperature Synthesis of VO2 and Hysteresis Free VOx Thin Films with High Temperature Coefficient of Resistance for Bolometer Applications", Thin Solid Films, Vol. 781, art. no. 139975, September 2023.
    12. M. S. Nazir, A. Pampori, R. Dangi, S. A. Ahsan, and Y. S. Chauhan, "Charge-based Flicker Noise Modeling of GaN HEMTs down to Cryogenic Temperatures", IEEE Electron Device Letters, Vol. 44, Issue 9, pp. 1416-1419, September 2023.
    13. S. S. Parihar, S. Thomann, G. Pahwa, Y. S. Chauhan, and H. Amrouch, "Cryogenic In-Memory Computing for Quantum Processors using Commercial 5nm FinFETs", IEEE Open Journal of Circuits and Systems, Vol. 4, pp. 258-270, Aug. 2023.
    14. P. R. Genssler, F. Klemme, S. S. Parihar, S. Brandhofer, G. Pahwa, I. Polian, Y. S. Chauhan, and H. Amrouch, "Cryogenic Embedded System to Support Quantum Computing: From 5nm FinFET to Full Processor", IEEE Transactions on Quantum Engineering, Vol. 4, art. No. 5500611, August 2023.
    15. S. S. Parihar, V. M. Santen, S. Thomann, G. Pahwa, Y. S. Chauhan, and H. Amrouch, "Cryogenic CMOS for Quantum Processing: 5nm FinFET based SRAM Arrays at 10K", IEEE Transactions on Circuits and Systems - I, Vol. 70, Issue 8, pp. 3089-3102, August 2023.
    16. S. S. Parihar, A. Pampori, P. Dwivedi, J. Huang, W. Wang, K. Imura, Chenming Hu, and Y. S. Chauhan, "A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs", IEEE Journal of the Electron Devices Society, Vol. 11, pp. 444-455, July 2023.
    17. S. Kumar, S. Chatterjee, S. Thomann, Y. S. Chauhan, and H. Amrouch, "Cross-Layer Reliability Modeling of Dual-Port FeFET: Device-Algorithm Interaction", IEEE Transactions on Circuits and Systems - I, Vol. 70, Issue 7, pp. 2891-2903, July 2023.
    18. K. Nandan, S. Bhowmick, Y. S. Chauhan, and A. Agarwal, "Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 (M = Mo, Cr, Zr, Ti, Hf; A = Si, Ge; Z = N, P, As) monolayer series", Physical Review Applied, Vol. 19, Issue 6, June 2023.
    19. S. Kumar, S. Chatterjee, C. K. Dabhi, Y. S. Chauhan, and H. Amrouch, "Non-Traditional Design of Dynamic Logics using FDSOI for Ultra-Efficient Computing", IEEE Journal of Exploratory Solid-State Computational Devices and Circuits, Vol. 9, Issue 1, June 2023.
    20. G. Joshi, Y. S. Chauhan, and A. Verma, "Investigation of growth dynamics during LPCVD of β-Ga2O3 by independently controlling Ga precursor and substrate temperature", Japanese Journal of Applied Physics,Vol. 62, Number SF, June 2023.
    21. S. Chatterjee, N. Rangarajan, S. Patnaik, D. Rajasekharan, O. Sinanoglu, and Y. S. Chauhan, "FerroCoin: Ferroelectric Tunnel Junction-based True Random Number Generator", IEEE Transactions on Emerging Topics in Computing, Vol. 11, Issue 2, April-June 2023.
    22. A. Naseer, K. Nandan, S. Bhowmick, A. Agarwal, and Y. S. Chauhan, "Di-Metal Chalcogenides: A New Family of Promising 2-D Semiconductors for High-Performance Transistors", IEEE Transactions on Electron Devices, Vol. 70, Issue 5, pp. 2445-2452, May 2023.
    23. N. Pandey and and Y. S. Chauhan, "Multi-Domain Interactions in Perpendicular Magnetic Tunnel Junction (p-MTJ): Enabling Multi-State MRAM", IEEE Transactions on Electron Devices, Vol. 70, Issue 5, pp. 2304-2311, May 2023.
    24. A. Gaidhane, R. Dangi, S. Sahay, A. Verma, and Y. S. Chauhan, "A Computationally Efficient Compact Model for Ferroelectric Switching with Asymmetric Non-Periodic Input Signals", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 42, Issue 5, pp. 1634-1642, May 2023. Verilog-A Code for Fe-FET
    25. A. Kar, K. Nandan, and Y. S. Chauhan, "A Physics-Based Compact Model for Silicon Cold Source Transistors", IEEE Transactions on Electron Devices, Vol. 70, Issue 4, pp. 1580-1588, April 2023.
    26. K. Nandan, A. Naseer and Y. S. Chauhan, "Field-Effect Transistors based on Two-dimensional Materials", Transactions of the Indian National Academy of Engineering, Vol. 8, Issue 1, pp. 1 - 14, March 2023.
    27. N. Bajpai, Paramita Maity, Manish Shah, Amitava Das, and and Y. S. Chauhan, "An Ultra-Low Noise Figure and Multi-band Re-configurable Low Noise Amplifier", IEEE Transactions on Circuits and Systems - I, Vol. 70, Issue 3, pp. 1006-1016, March 2023.
    28. S. Chatterjee, S. Kumar, A. Gaidhane, C. K. Dabhi, Y. S. Chauhan, and H. Amrouch, "Ferroelectric FDSOI FET Modeling for Memory and Logic Applications", Solid State Electronics, Vol. 200, art. no. 108554, February 2023.
    29. G. Pahwa, A. Sharma, R. Goel, G. Gill, H. Agarwal, Y. S. Chauhan, and C. Hu, "Robust Compact Model of High Voltage MOSFETs’ Drift Region", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 42, Issue 1, pp. 337-340, January 2023.
    30. I. Ahamed, Y. S. Chauhan, S. Bhowmick, and A. Agarwal, "Easily exfoliable monolayer of GdTe3: ab initio study", Computational Materials Science, Vol. 216, Issue 0927-0256, pp. 111869, January 2023.
    31. M. S. Nazir, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "Characterization and Modeling of Drain Lag using a Modified RC Network in the ASM-HEMT Framework", Solid State Electronics, Vol. 199, art. no. 108490, January 2023.
    32. N. Pandey and Y. S. Chauhan, "Dynamics and modeling of Multi-Domains in Ferroelectric Tunnel Junction- Part-II: Electrostatics and Transport", IEEE Transactions on Electron Devices, Vol. 70, Issue 1, pp. 327-334, January 2023.
      33. Conference Papers:
    33. A. Mishra, R. Vishwakarma, J. Yadav, Y. S. Chauhan, and A. Verma, "Transparent Band-To-Band Frequency Reconfigurable Microwave Absorber Using Vanadium Dioxide Based Switchable Ground Plane", IEEE Microwaves, Antennas and Propogation Conference (MAPCON), Ahmedabad, India, Dec. 2023.
    34. M. Zaid, A. Pampori, S. Nazir, and Y. S. Chauhan, "High Efficiency and High Linearity GaN Power Amplifier With Harmonic Tuning and Fundamental Matching Networks", IEEE Microwaves, Antennas and Propogation Conference (MAPCON), Ahmedabad, India, Dec. 2023.
    35. S. Chatterjee, S. Kumar, A. Sunil, S. De, D. Lehninger, M. Jank, T. Kampfe, Y. S. Chauhan, and H. Amrouch, "Defying Temperature: Reliable Compute-in-Memory in Monolithic 3D using BEOL Ferroelectric TFT", IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2023.
    36. R. Mishra, Y. S. Chauhan, and P. Dwivedi, "Detecting Lower Binding of Target Biomolecules Through Pocket Tunnel FET Device", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, India, Dec. 2023.
    37. S. Kumar, Y. S. Chauhan, and H. Amrouch, "Ultra-Efficient Edge AI using FeFET-based Monolithic 3D Integration", IEEE International Conference on Computer-Aided Design (ICCAD), San Francisco, USA, Oct.-Nov. 2023.
    38. S. Kumar, P. R. Genssler, S. Mansour, Y. S. Chauhan, and H. Amrouch, "Frontiers in AI Acceleration: From Approximate Computing to FeFET Monolithic 3D Integration", IEEE Conference on Very Large Scale Integration (VLSI-SoC 2023), Sharjah, UAE, Oct. 2023. (Invited)
    39. Ashok P, Y. S. Chauhan, and A. Verma, "Demonstration of Adaptive Infrared Camouflage Using Wafer Scale Vanadium Dioxide Thin Films on Silicon", Photonics 2023, Bengaluru, July 2023.
    40. S. S. Parihar, S. Chatterjee, G. Pahwa, Y. S. Chauhan, and Hussam Amrouch, "Modeling and Benchmarking 5nm Ferroelectric FinFET from Room Temperature down to Cryogenic Temperatures", IEEE 23rd International Conference on Nanotechnology (NANO), Jeju, South Korea, July, 2023. (Invited)
    41. S. S. Parihar, S. Thomann, G. Pahwa, Y. S. Chauhan, and H. Amrouch, "5nm FinFET Cryogenic SRAM Evaluation for Quantum Computing", 81st Device Research Conference (DRC), Santa Barbara, USA, June, 2023.
    42. V. M. Santen, S. S. Parihar, G. Pahwa, M. Walter, F. Klemme, R. Wille, Y. S. Chauhan, and H. Amrouch, "Design Automation for Cryogenic CMOS Circuits", IEEE Design Automation Conference (DAC), San Francisco, USA, June 2023.
    43. M. H. Ansari, R. Dangi, A. Pampori, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.
    44. S. S. Parihar, G. Pahwa, J. Z. Huang, W. Wang, K. Imura, C. Hu, and Y. S. Chauhan, "Cryogenic Characterization and Model Extraction of 5nm Technology Nodes FinFETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.
    45. A. Sharma, R. Goel, and Y. S. Chauhan, "Analysis and Modeling of OFF-state Capacitance in LDD MOSFETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.
    46. A. Mishra, Ashok P, Y. S. Chauhan, and A. Verma, "Vanadium Dioxide Series/Shunt RF Switches Synthesized using Low Thermal Budget Process", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.
    47. M. S. Nazir, A. Pampori, Y. Hayat, A. Kar, and Y. S. Chauhan, "Characterization and Modeling of I-V, C-V and Trapping behaviour of SiC Power MOSFETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.
    48. Y. S. Chauhan, A. Kar, S. S. Parihar, J. Z. Huang, H. Zhang, W. Wang, and K. Imura, "High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023. (Invited)

    2022:
      Journal Articles:
    1. N. Pandey and Y. S. Chauhan, "Dynamics and modeling of Multi-Domains in Ferroelectric Tunnel Junction- Part-I: Mathematical Framework", IEEE Transactions on Electron Devices, Vol. 69, Issue 12, pp. 7147-7155, January 2023.
    2. L. Mankali, N. Rangarajan, S. Chatterjee, S. Kumar, Y. S. Chauhan, O. Sinanoglu, and H. Amrouch, "Leveraging Ferroelectric Stochasticity and In-Memory Computing for DNN IP Obfuscation", IEEE Journal of Exploratory Solid-State Computational Devices and Circuits, Vol. 8, pp. 102-110, December 2022.
    3. N. Bajpai and Y. S. Chauhan, "A Multi-Variable Double Impedance Matching Network Design Algorithm with Design Example of A Low Noise Amplifier", International Journal of RF and Microwave Computer-Aided Engineering, Vol. 32, Issue 12, e23462, December 2022.
    4. N. Pandey and Y. S. Chauhan, "Impact of Domain Wall Motion on the Memory Window in a Multi-Domain Ferroelectric FET", IEEE Electron Device Letters , Vol. 43, Issue 11, pp. 1854-1857, November 2022.
    5. W. Manzoor, A. K. Dutta and Y. S. Chauhan, "Analytical Approximation of Surface Potential and Analysis of C-V Characteristics of Bulk MOSFETs at Cryogenic Temperatures", Microelectronics Journal, Vol. 129, pp. 105586, November 2022.
    6. M. S. Nazir, P. Kushwaha, A. Pampori, S. A. Ahsan, and Y. S. Chauhan, "Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures", IEEE Transactions on Electron Devices, Vol. 69, Issue 11, November 2022.
    7. M. Rafiq, S. S. Parihar, Y. S. Chauhan, and S. Sahay, "Efficient Implementation of Max-Pooling Algorithm Exploiting History-effect in Ferroelectric-FinFETs", IEEE Transactions on Electron Devices, Vol. 69, Issue 11, November 2022.
    8. Ashok P, Y. S. Chauhan, and A. Verma, "Multi Spectral Switchable Infra-Red Reflectance Resonances in Highly Subwavelength Partially Oxidized Vanadium Thin Films", Optical Materials, Vol. 132, art. no. 112854, October 2022.
    9. R. Goel, A. Sharma and Y. S. Chauhan, "Analysis and Modeling of Current Mismatch in Negative Capacitance Field Effect Transistor", IEEE Transactions on Electron Devices, Vol. 69, Issue 9, pp. 5337-5344, September 2022.
    10. A. Priydarshi, Y. S. Chauhan, S. Bhowmick, and A. Agarwal, "Large and anisotropic carrier mobility in monolayers of the MA2Z4 series (M=Cr, Mo, W; A=Si, Ge; Z=N, P)", Nanoscale, Vol. 14, Issue 33, pp. 11988-11997, September 2022.
    11. S. Chatterjee, S. Thomann, K. Ni, Y. S. Chauhan, H. Amrouch, "Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage", IEEE Transactions on Electron Devices, Vol. 69, Issue 9, pp. 5316-5323, September 2022.
    12. N. Pandey and Y. S. Chauhan, "Physics and modeling of multi-domain FeFET with domain wall induced Negative Capacitance", IEEE Transactions on Electron Devices, Vol. 69, Issue 8, pp. 4659 - 4666, Aug. 2022.
    13. D. Rajasekharan, A. Gaidhane, A. R. Trivedi, and Y. S. Chauhan, "Ferroelectric FET-based Implementation of FitzHugh-Nagumo Neuron Model", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 41, Issue 7, July 2022.
    14. A. U. H. Pampori, S. A. Ahsan, and Y. S. Chauhan, "Modeling the Impact of Dynamic Fin-width on the I–V, C–V and RF Characteristics of GaN Fin–HEMTs", IEEE Transactions on Electron Devices, Vol. 65, Issue 5, pp. 2275-2281, May 2022.
    15. S. Salamin, G. Zervakis, F. Klemme, H. Kattan, Y. S. Chauhan, J. Henkel, and H. Amrouch, "Impact of NCFET Technology on Eliminating the Cooling Cost and Boosting the Efficiency of Google TPU", IEEE Transactions on Computers, Vol. 71, Issue 4, pp. 906 - 918, April 2022.
    16. A. Priydarshi, Y. S. Chauhan, S. Bhowmick, and A. Agarwal, "Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides", Journal of Applied Physics, Vol. 31, Issue 3, art. no. 034101, March 2022.
    17. K. Nandan, B. Ghosh, A. Agarwal, S. Bhowmick and Y. S. Chauhan, "Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Field-Effect Transistors", IEEE Transactions on Electron Devices, Vol. 69, Issue 1, pp. 406-413, Jan. 2022.
      18. Conference Papers:
    18. Ashok P, Y. S. Chauhan, and A. Verma, "Experimental Demonstration of VO2 based Lateral/Vertical Devices and Relaxation Oscillator with an Ultra-low Thermal Budget Process", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
    19. N. Pandey, A. Phogat, and Y. S. Chauhan, "On the Memory Window Variability in a 3-D Multi-Granular Ferroelectric FET Including Grain Boundaries", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
    20. W. Manzoor, R. Goel, A. K. Dutta, and Y. S. Chauhan, "Improved Surface Potential Based Compact Model for Bulk MOSFETs at Cryogenic Temperatures", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
    21. K. Nandan, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Extremely Scaled Silicon Nanosheet Transistors", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
    22. V. N. Bhukya, R. Dey, and Y. S. Chauhan, "Micromagnetic Simulations of Magnetization Dynamics due to Position-dependent Spin-Orbit Torque from Topological Insulator", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
    23. A. Sharma, Y. H. Zarkob, R. Goel, C. K. Dabhi, G. Pahwa, C. Hu, and Y. S. Chauhan, "Recent Enhancements in the Standard BSIM-BULK MOSFET Model", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
    24. M. Zaid, A. Pampori, R. Dangi, and Y. S. Chauhan, "S-Band GaN based Power Amplifier with Symmetric Matching Network", 9th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON-2022), Prayagraj, India, November 2022.
    25. M. Zaid, A. Pampori, and Y. S. Chauhan, "16 Watt S-Band GaN Based Power Amplifier Using Replicating Stages", 9th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON-2022), Prayagraj, India, November 2022.
    26. S. Kumar, S. Chatterjee, S. Thomann, P. R. Genssler, Y. S. Chauhan, and H. Amrouch, "Cross-layer FeFET Reliability Modeling for Robust Hyperdimensional Computing", 30th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Patras, Greece, October 2022.
    27. G. Joshi, Y. S. Chauhan, and A. Verma, "Insights from Independent Control of Gallium Precursor and Substrate Temperature during LPCVD of β-Ga2O3", 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), Nagano, Japan, October 2022.
    28. M. S. Nazir, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "Characterization and Modeling of Drain Lag using a Modified RC Network in the ASM-HEMT Framework", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain, September 2022.
    29. S. Chatterjee, S. Kumar, A. D. Gaidhane, C. K. Dabhi, H. Amrouch, and Y. S. Chauhan, "Ferroelectric FDSOI Modeling for Memory and Neuromorphic Applications", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain, September 2022.
    30. N. Bajpai and Y. S. Chauhan, "A GaN Based Reverse Recovery Time Limiter Circuit Integrated with a Low Noise Amplifier", 26th International Symposium on VLSI Design and Test (VDAT-2022), Jammu, 1687 CCIS, pp. 212-221, July 2022.
    31. S. Kumar, S. Chatterjee, C. K. Dabhi, H. Amrouch, and Y. S. Chauhan, "Novel FDSOI-based Dynamic XNOR Logic for Ultra-Dense Highly-Efficient Computing", IEEE International Symposium on Circuits & Systems (ISCAS), Austin, USA, June 2022.
    32. S. Kumar, S. Chatterjee, C. K. Dabhi, H. Amrouch, and Y. S. Chauhan, "A Novel Approach to Mitigate Power Side-Channel Attacks for Emerging Negative Capacitance Transistor Technology", 20th IEEE Interregional NEWCAS Conference (NEWCAS), Québec, Canada, June 2022.
    33. S. S. Parihar, J. Z. Huang, W. Wang, K. Imura, and Y. S. Chauhan, "Self-Heating characterization and modeling of 5nm technology node FinFETs", 80th Device Research Conference (DRC), Ohio, USA, June, 2022.
    34. A. Kar, S. Sarker, A. Dasgupta, and Y. S. Chauhan, "Impact of Corner Rounding on Quantum Confinement in GAA Nanosheet FETs for Advanced Technology Nodes", 80th Device Research Conference (DRC), Ohio, USA, June, 2022.
    35. R. Dangi, A. Pampori, P. Kushwaha, E. Yadav, S. Sinha, and Y. S. Chauhan, "A width-scalable SPICE compact model for GaN HEMTs including self-heating effect", 80th Device Research Conference (DRC), Ohio, USA, June, 2022.
    36. Z. Jiang, Y. Xiao, S. Chatterjee, H. Mulaosmanovic, S. Duenkel, S. Soss, S. Beyer, R. Joshi, Y. S. Chauhan, H. Amrouch, V. Narayanan, and K. Ni, "Asymmetric Double Gate Ferroelectric FET to Break the Tradeoff Between Thickness Scaling and Memory Window", IEEE Symposium on VLSI Technology and Circuits, Hawaii, USA, June 2022.
    37. S. Chatterjee, S. Kumar, A. D. Gaidhane, C. K. Dabhi, H. Amrouch, and Y. S. Chauhan, "Modeling of Fe-FDSOI FET for Memory and Neuromorphic Applications", DATE (Design, Automation and Test in Europe Conference) 2022 workshop on Ferroelectronics, Mar. 2022.
    38. Y. S. Chauhan, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, "A Turnkey Large-Signal Model for Amplifier Design in 5G Spectra using AlGaN/GaN HEMTs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Oita, Japan, Mar. 2022. (Invited)

    2021:
      Journal Articles:
    1. K. Nandan, A. Agarwal, S. Bhowmick and Y. S. Chauhan, "Performance Investigation of p-FETs Based on Highly Air-stable Mono-layer Pentagonal PdSe2", IEEE Transactions on Electron Devices, Vol. 68, Issue 12, pp. 6551 - 6557, December 2021.
    2. N. Pandey, G. Pahwa, and Y. S. Chauhan, "Addressing Source to Drain Tunneling in Extremely Scaled Si-Transistors using Negative Capacitance", Solid State Electronics, Vol. 186, art. no. 108189, December 2021.
    3. G. Joshi, Y. S. Chauhan and A. Verma, "Temperature Dependence of β-Ga2O3 Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition", Journal of Alloys and Compounds, Vol. 883, art. no. 160799, Nov. 2021.
    4. S. Salamin, G. Zervakis, Y. S. Chauhan, J. Henkel, and H. Amrouch, "PROTON: Post-synthesis ferROelectric Thickness OptimizatioN for NCFET Circuits", IEEE Transactions on Circuits and Systems I, Vol. 68, Issue 10, pp. 4299 - 4309, Oct. 2021.
    5. O. Prakash, A. Gupta, G. Pahwa, Y. S. Chauhan, and H. Amrouch, "On the Critical Role of Ferroelectric Thickness for Negative Capacitance Device-Circuit Interaction", IEEE Journal of the Electron Devices Society, Vol. 9, pp. 1262 - 1268, September 2021.
    6. N. Bajpai, A. Pampori, P. Maity, M. Shah, A. Das, and Y. S. Chauhan, "A Low Noise Power Amplifier MMIC to Mitigate Co-site Interference in 5G Front End Modules", IEEE Access, Vol. 9, pp. 124900-124909, Sept. 2021.
    7. R. R. Malik, M. A. Mir, Z. Bhat, A. U. H. Pampori, Y. S. Chauhan, and S. A. Ahsan, "Modeling and Analysis of Double Channel GaN HEMTs using a Physics-based Analytical Model", IEEE Journal of the Electron Devices Society, Vol. 9, pp. 789 - 797, Sept. 2021.
    8. A. D. Gaidhane, A. Verma and Y. S. Chauhan, "Study of Multi-Domain Switching Dynamics in Negative Capacitance FET using SPICE Model", Microelectronics Journal, Vol. 115, art. no. 105186, Sept. 2021.
    9. N. Pandey, K. Qureshi and Y. S. Chauhan, "Variability Analysis in a 3-D Multi-Granular Ferroelectric Capacitor", IEEE Transactions on Electron Devices, Vol. 68, Issue 8, pp. 3780 - 3786, Aug. 2021.
    10. R. Goel, C. Gupta, M. Skalsky and Y. S. Chauhan, "Analysis and Modeling of Anomalous Flicker Noise in Long Channel Halo MOSFETs", Solid State Electronics,Vol. 181–182, art. no. 108028, August 2021.
    11. C. K. Dabhi, A. S. Roy, L. Yang and Y. S. Chauhan, "Anomalous GIDL Effect with Back Bias in FinFET: Physical Insights and Compact Modeling", IEEE Transactions on Electron Devices, Vol. 68, Issue 7, pp. 3261 - 3267, July 2021.
    12. A. U. H. Pampori, S. A. Ahsan, R. Dangi, U. Goyal, S. K. Tomar, M. Mishra and Y. S. Chauhan, "Modeling of Bias Dependent Effective Velocity and its Impact on Saturation Transconductance in AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, Vol. 68, Issue 7, pp. 3302 - 3307, July 2021.
    13. R. Goel, W. Wang, and Y. S. Chauhan, "Improved Modeling of Flicker Noise Including Velocity Saturation Effect in FinFETs and Experimental Validation", Microelectronic Journal, Vol. 110, art. no. 105020, April 2021.
    14. Ashok P, Y. S. Chauhan, and A. Verma, "Effect of Vanadium Thickness and Deposition Temperature on VO2 Synthesis using Atmospheric Pressure Thermal Oxidation", Thin Solid Films, Vol. 724, art. no. 138630, April 2021.
    15. O. Prakash, G. Pahwa, C. K. Dabhi, Y. S. Chauhan, and H. Amrouch, "Impact of Self-Heating on Negative-Capacitance FinFET: Device-Circuit Interaction", IEEE Transactions on Electron Devices, Vol. 68, Issue 4, pp. 1420 - 1424, April 2021.
    16. G. Paim, G. Zervakis, G. Pahwa, Y. S. Chauhan, E. A. C. Costa, S. Bampi, J. Henkel, and H. Amrouch, "On the Resiliency of NCFET Circuits against Voltage Over-Scaling", IEEE Transactions on Circuits and Systems I, Vol. 68, Issue 4, pp. 1481 - 1492, April 2021.
    17. G. Zervakis, I. Anagnostopoulos, S. Salamain, Y. S. Chauhan, J. Henkel, and H. Amrouch, "Impact of NCFET on Neural Network Accelerators", IEEE Access, Vol. 9, pp. 43748 - 43758, 2021.
    18. G. Pahwa, A. Gaidhane, A. Agarwal, and Y. S. Chauhan, "Assessing Negative-Capacitance Drain-Extended Technology for High-Voltage Switching and Analog Applications", IEEE Transactions on Electron Devices, Vol. 68, Issue 2, pp. 679 - 687, Feb. 2021.
    19. P. Dwivedi, R. Singh, and Y. S. Chauhan, "Crossing the Nernst Limit (59 mV/pH) of Sensitivity Through Tunneling Transistor Based Biosensor", IEEE Sensors Journal, Vol. 21, Issue 3, pp. 3233 - 3240, Feb. 2021.
      20. Conference Papers:
    20. N. Bajpai and Y. S. Chauhan, "A Broadband Power Amplifier MMIC to Compensate the Frequency Dependent Behaviour", IEEE International Microwave and RF Conference (IMaRC), Kanpur, India, Dec. 2021.
    21. A. Kar, A. Pampori, N. Hashimoto, and Y. S. Chauhan, "A Charge-Based Silicon Carbide MOSFET Compact Model for Power Electronics Applications", IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON), Dehradun, India, Nov. 2021.
    22. R. Goel and Y. S. Chauhan, "Compact Modeling of Flicker Noise in High Voltage MOSFETs and Experimental Validation", IEEE Latin America Electron Devices Conference (LAEDC), April 2021.
    23. O. Prakash, C. Dabhi, Y. Chauhan, and H. Amrouch, "Transistor Self-Heating: The Rising Challenge for Semiconductor Testing", IEEE VLSI Test Symposium (VTS’21), April 2021.
    24. V. M. V. Santen, S. Thomann, Y. Chauhan, J. Henkel, and H. Amrouch, "Reliability-Driven Voltage Optimization for NCFET-based SRAM Memory Banks", IEEE VLSI Test Symposium (VTS’21), April 2021.
    25. O. Prakash, A. Gupta, G. Pahwa, Y. S. Chauhan, and H. Amrouch, "On the Critical Role of Ferroelectric Thickness for Negative Capacitance Transistor Optimization", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Chengdu, China, Mar. 2021.
    26. G. Bajpai, A. Gupta, O. Prakash, Y. S. Chauhan, and H. Amrouch, "Soft Errors in Negative Capacitance FDSOI SRAMs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Chengdu, China, Mar. 2021.

    2020:
      Journal Articles:
    1. J. Knechtel, S. Patnaik, M. Nabeel, M. Ashraf, Y. S. Chauhan, J. Henkel, O. Sinanoglu, and H. Amrouch, "Power Side-Channel Attacks in Negative Capacitance Transistor (NCFET)", IEEE Micro, Vol. 40, Issue 6, Nov.-Dec. 2020.
    2. O. Prakash, G. Pahwa, Y. S. Chauhan and H. Amrouch, "Impact of Interface Traps on Negative Capacitance Transistor: Device and Circuit Reliability", IEEE Journal of Electron Devices Society, Vol. 8, Nov. 2020.
    3. K. Nandan, C. Yadav, P. Rastogi, A. T.-Lopez, A. M.-Sanchez, E. G. Marin, F. G. Ruiz, S. Bhowmick, and Y. S. Chauhan, "Compact Modeling of Multi-layered MoS2 FETs including Negative Capacitance Effect", IEEE Journal of Electron Devices Society, Vol. 8, Nov. 2020.
    4. A. D. Gaidhane, G. Pahwa, A. Dasgupta, A. Verma, and Y. S. Chauhan, "Compact Modeling of Surface Potential, Drain Current and Terminal Charges in Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport", IEEE Journal of Electron Devices Society, Vol. 8, Nov. 2020.
    5. C. Gupta, S. Dey, R. Goel, C. Hu, and Y. S. Chauhan, "Modeling of Current Mismatch and 1/f Noise for Halo Implanted Drain-Extended MOSFETs", IEEE Transactions on Electron Devices, Vol. 67, Issue 11, Nov. 2020.
    6. N. Pandey and Y. S. Chauhan, "Analytical Modeling of Short Channel Effects in MFIS Negative Capacitance FET including Quantum Confinement Effects", IEEE Transactions on Electron Devices, Vol. 67, Issue 11, Nov. 2020.
    7. S. Agnihotri, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Exploration of High Symmetry β-PxSiy Materials for 2D-electronics", Proceedings of the Indian National Science Academy (PINSA), Vol. 86, Issue 3, Oct. 2020.
    8. D. Rajasekharan, P. Kushwaha, and Y. S. Chauhan, "Associative Processing using Negative Capacitance FDSOI Transistor for Pattern Recognition", Microelectronics Journal, Vol. 104, art. no. 104877, Oct. 2020.
    9. H. Amrouch, G. Pahwa, A. D. Gaidhane, C. K. Dabhi, F. Klemme, O. Prakash and Y. S. Chauhan, "Impact of Variability on Processor Performance in Negative Capacitance FinFET Technology", IEEE Transactions on Circuits and Systems I, Vol. 67, Issue 9, Sep. 2020.
    10. C. K. Dabhi, S. S. Parihar, A. Dasgupta, and Y. S. Chauhan, "Compact Modeling of Negative-Capacitance FDSOI FETs for Circuit Simulations", IEEE Transactions on Electron Devices, Vol. 67, Issue 7, July 2020.
    11. Ashok P, Y. S. Chauhan, and A. Verma, "Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation", Thin Solid Films,Vol. 706, art. no. 138003, July 2020.
    12. Ashok P, Y. S. Chauhan, and A. Verma, "High Infrared Reflectance Modulation in VO2 Films Synthesized on Glass and ITO coated Glass substrates using Atmospheric Oxidation of Vanadium", Optical Materials, 110, art. no. 110438, July 2020.
    13. F. Bellando, C. K. Dabhi, A. Saeidi, C. Gastaldi, Y. S. Chauhan, and A. M. Ionescu, "Subthermionic Negative Capacitance Ion Sensitive Field-Effect Transistor", Applied Physics Letters, Vol. 116, Issue 17, April 2020.
    14. A. D. Gaidhane, G. Pahwa, A. Verma, and Y. S. Chauhan, "Gate Induced Drain Leakage in Negative Capacitance FinFETs", IEEE Transactions on Electron Devices, Vol. 67, Issue 3, March 2020.
    15. A. Dasgupta, S. S. Parihar, H. Agarwal, P. Kushwaha, Y. S. Chauhan and C. Hu, "Compact Model for Geometry Dependent Mobility in Nanosheet FETs", IEEE Electron Device Letters, Vol. 41, Issue 3, March 2020.
    16. A. Dasgupta, S. S. Parihar, P. Kushwaha, H. Agarwal, M.-Y. Kao, S. Salahuddin, Y. S. Chauhan and C. Hu, "BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs", IEEE Transactions on Electron Devices, Vol. 66, Issue 2, pp. 730-737, Feb. 2020.
      17. Conference Papers:
    17. A. Rathi, M. Kumar, J. K. Verma, H. S. Jatana, Y. S. Chauhan, and Abhisek Dixit, "Modeling of 0.18µm RF Bulk and SOI Planar MOSFETs using Industry Standard BSIM Models", IEEE International Conference on Emerging Electronics (ICEE), Delhi, Nov. 2020.
    18. A. Dutta, D. Rajasekharan, and Y. S. Chauhan, "Compact Model Parameter Extraction Using Modular Q Learning for Nano-Scale Transistors", IEEE International Conference on Emerging Electronics (ICEE), Delhi, Nov. 2020.
    19. F. Klemme, Y. Chauhan, J. Henkel, and H. Amrouch, "Cell Library Characterization using Machine Learning for Design Technology Co-Optimization", IEEE International Conference on Computer-Aided Design (ICCAD), Paris, France, Nov. 2020.
    20. G. Bajpai, A. Gupta, O. Prakash, G. Pahwa, J. Henkel, Y. S. Chauhan, and H. Amrouch, "Impact of Radiation on Negative Capacitance FinFET", IEEE International Reliability Physics Symposium (IRPS), Grapevine-Texas, USA, Mar.-Apr. 2020.
    21. A. D. Gaidhane, G. Pahwa, A. Dasgupta, A. Verma, and Y. S. Chauhan, "Compact Modeling of Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.
    22. J. K. Verma and Y. S. Chauhan, "Investigation of Standard and Enclosed Gate n-MOSFET Degradation due to Total Ionizing Dose Using BSIM-BULK", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.
    23. R. Goel, C. Gupta, and Y. S. Chauhan, "Analysis and Compact Modeling of Thermal Noise in Halo Implanted MOSFETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.
    24. O. Prakash, A. Gupta, G. Pahwa, J. Henkel, Y. S. Chauhan and H. Amrouch, "Impact of Interface Traps Induced Degradation on Negative Capacitance FinFET", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.
    25. K. Nandan, C. Yadav, P. Rastogi, A. T.-Lopez, A. M.-Sanchez, E. G. Marin, F. G. Ruiz, S. Bhowmick, and Y. S. Chauhan, "Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS2 FETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.
    26. H. Agarwal, P. Kushwaha, A. Dasgupta, M.-Y. Kao, T. Morshed, G. Workman, K. Shanbhag, X. Li, Y. S. Chauhan, S. Salahuddin, C. Hu, "BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.
    27. H. Amrouch, V. M. Van Santen, G. Pahwa, Y. S. Chauhan, J. Henkel, "NCFET to Rescue Technology Scaling: Opportunities and Challenges", IEEE Asia and South Pacific Design Automation Conference (ASP-DAC), Beijing, China, Jan. 2020.

    2019:
      Journal Articles:
    1. H. Agarwal, C. Gupta, R. Goel, P. Kushwaha, Y.-K. Lin, M.-Y. Kao, J.-P Duarte, H.-L. Chang, Y. S. Chauhan, S. Salahuddin, and C. Hu, "BSIM-HV: High Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect", IEEE Transactions on Electron Devices, Vol. 66, Issue 10, pp. 4258-4263, Oct. 2019.
    2. S. Tomar, B. Ghosh, S. Mardanya, P. Rastogi, B. S. Bhadoria, Y. S. Chauhan, A. Agarwal, and S. Bhowmick, "Intrinsic magnetism in monolayers of transition metal trihalides: a comparative study", Journal of Magnetism and Magnetic Materials, Vol. 489, pp. 165384, Nov. 2019.
    3. C. K. Dabhi, A. S. Roy, and Y. S. Chauhan, "Compact Modeling of Temperature Dependent Gate-Induced-Drain-Leakage Including Low Field Effects", IEEE Transactions on Electron Devices, Vol. 66, Issue 7, pp. 2892-2897, July 2019.
    4. H. Amrouch, S. Salamin, G. Pahwa, A. D. Gaidhane, J. Henkel, and Y. S. Chauhan, "Unveiling the Impact of IR-drop on Performance Gain in NCFET-based Processors", IEEE Transactions on Electron Devices, Vol. 66, Issue 7, pp. 3215-3223, July 2019.
    5. S. Agnihotri, M. Kumar, Y. S. Chauhan, A. Agarwal, and S. Bhowmick, "Interlayer decoupling in twisted bilayers of β-phosphorus and arsenic", FlatChem, Vol. 16, pp. 100112, July 2019.
    6. C. Gupta, H. Agarwal, R. Goel, C. Hu, and Y. S. Chauhan, "Improved Modeling of Bulk Charge Effect for BSIM-BULK Model", IEEE Transactions on Electron Devices, Vol. 66, Issue 6, pp. 2850-2853, June 2019.
    7. G. Pahwa, A. Agarwal, and Y. S. Chauhan, "Numerical Investigation of Short Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior", IEEE Transactions on Electron Devices, Vol. 66, Issue 3, pp. 1591–1598, Mar. 2019.
    8. M. Bhoir, Y. S. Chauhan and N. R. Mohapatra, "Back-gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization Guidelines", IEEE Transactions on Electron Devices, Vol. 66, Issue 2, pp. 861-867, Feb. 2019.
    9. C. Gupta, N. Mohamed, H. Agarwal, R. Goel, C. Hu, and Y. S. Chauhan, "Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter Wave Applications", IEEE Transactions on Electron Devices, Vol. 66, Issue 1, pp. 44-51, Jan. 2019.
    10. Thirunavukkarasu A, H. Amrouch, J. Joe, N. Goel, N. Parihar, S. Mishra, C. K. Dabhi, Y. S. Chauhan, J. Henkel, and S. Mahapatra, "A Device to Circuit Framework for Activity Dependent NBTI Aging in Digital Circuits", IEEE Transactions on Electron Devices, Vol. 66, Issue 1, pp. 316-323, Jan. 2019.
    11. S. Khandelwal, Y. S. Chauhan, T. A. Fjeldly, S. Ghosh, A. Pampori, D. Mahajan, R. Dangi, and S. A. Ahsan, "ASM GaN: Industry Standard Model for GaN RF and Power Devices - Part-I: DC, CV, and RF Model", IEEE Transactions on Electron Devices, Vol. 66, Issue 1, pp. 80-86, Jan. 2019.
    12. S. A. Albahrani, D. Mahajan, J. Hodges, Y. S. Chauhan, and S. Khandelwal, "ASM GaN: Industry Model for GaN RF and Power Devices - Part-II: Modeling of Charge Trapping", IEEE Transactions on Electron Devices, Vol. 66, Issue 1, pp. 87-94,Jan. 2019.
    13. A. Dasgupta, A. Verma, and Y. S. Chauhan, "Analysis and Compact Modeling of Insulator-Metal-Transition Material based PhaseFET Including Hysteresis and Multi-domain Switching", IEEE Transactions on Electron Devices, Vol. 66, Issue 1, pp. 169-176,Jan. 2019.
    14. S. Mishra, H. Amrouch, J. Joe, C. K. Dabhi, K. Thakor, Y. S. Chauhan, J. Henkel, and S. Mahapatra, "A Simulation Study of NBTI Impact on 14nm node FinFET Technology for Logic Applications: Device Degradation to Circuit Level Interaction", IEEE Transactions on Electron Devices, Vol. 66, Issue 1, pp. 271-278, Jan. 2019.
      15. Conference Papers:
    15. G. Joshi, Y. S. Chauhan, and A. Verma, "Growth and Characterization of β-Ga2O3 Thin Films using Low Pressure Chemical Vapor Deposition", International Workshop on Physics of Semiconductor Devices (IWPSD), Kolkata, India, Dec. 2019.
    16. Ashok P., Y. S. Chauhan, and A. Verma, "Vanadium Dioxide Thin Films with High Infra-Red Reflectance Modulation on Glass Substrate", International Conference on Optics and Optoelectronics (ICOL-2019), Dehradun, India, Oct. 2019.
    17. Ashok P., Y. S. Chauhan, and A. Verma, "Electrically and Optically Switching Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation", International Workshop on Oxide Electronics, Kyoto, Japan, Oct. 2019.
    18. P. Kushwaha, H. Agarwal, A. Dasgupta, Y. K. Lin, M-Y. Kao, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Modeling the Quantum Gate capacitance of Nano-Sheet Gate-All-Around MOSFET", IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, USA, Oct. 2019.
    19. C. K. Dabhi, P. Kushwaha, H. Agarwal, S. S. Chauhan, C. Hu, and Y. S. Chauhan, "Physical Analysis of Non-monotonic DIBL Dependence on Back Gate Bias in Thick Front Gate Oxide FDSOI MOSFETs", IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, USA, Oct. 2019.
    20. G. Pahwa, A. Agarwal and Y. S. Chauhan, "Evaluating Negative Capacitance Technology for RF MOS Varactors", IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, USA, Oct. 2019.
    21. K. Sharma, A. D. Gaidhane and Y. S. Chauhan, "Performance Enhancement of 4T-IFGC DRAM in 7nm NC-FinFET Technology Node", IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, USA, Oct. 2019.
    22. H. Amrouch, G. Pahwa, J. Henkel and Y. S. Chauhan, "NCFET-Aware Voltage Scaling", IEEE International Symposium on Low Power Electronics and Design (ISLPED), Lausanne, Switzerland, July 2019.
    23. M. Rapp, H. Amrouch, S. Salamin, G. Pahwa, J. Henkel and Y. S. Chauhan, "Performance, Power and Cooling Trade-Offs with NCFET-based Many-Cores", IEEE Design Automation Conference (DAC), Las Vegas, USA, June 2019.
    24. C. Gupta, R. Goel, H. Agarwal, C. Hu, and Y. S. Chauhan, "BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design", IEEE Custom Integrated Circuits Conference (CICC), Austin, USA, April 2019. (Invited)
    25. J. K. Verma, S. Ghosh, A. Yadav and Y. S. Chauhan, "Simulation, Characterization and Parameter Extraction of Radiation Hardened MOSFET", IEEE International Conference on Modeling of Systems Circuits and Devices, Hyderabad, India, Feb. 2019.
    26. S. A. Ahsan, A Pampori, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Impact of Via-Inductance on Stability Behavior of Large Gate-Periphery Multi-finger RF Transistors", IEEE International Conference on Modeling of Systems Circuits and Devices, Hyderabad, India, Feb. 2019.
    27. V. Kumar, C. K. Dabhi, S. S. Parihar and Y. S. Chauhan, "Analysis and Compact Modeling of Drain-Extended FinFET", IEEE International Conference on Modeling of Systems Circuits and Devices, Hyderabad, India, Feb. 2019.
    28. A. D. Gaidhane, G. Pahwa, A. Verma, and Y. S. Chauhan, "Modeling of Inner Fringing Charges and Short Channel Effects in Negative Capacitance MFIS Transistor", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Mar. 2019.
    29. D. Rajasekharan, A. R. Trivedi, and Y. S. Chauhan, "Neuromorphic Circuits on FDSOI Technology for Computer Vision Applications", IEEE International Conference on VLSI Design (VLSID), Delhi, India, Jan. 2018.

    2018:
      Journal Articles:
    1. A. K. Upadhyay, A. K. Kushwaha, P. Rastogi, Y. S. Chauhan, and S. K. Vishvakarma, "An Explicit Channel Charge, Backscattering and Mobility Model of Graphene FET in Quasi-Ballistic Regime", IEEE Transactions on Electron Devices, Vol. 65, Issue 12, pp. 5468-5474, Dec. 2018.
    2. U. K. Das, G. Eneman, R. S. R. Velampati, Y. S. Chauhan, K. B. Jinesh, and T. K. Bhattacharyya, "Consideration of UFET Architecture for the 5nm Node and Beyond Logic Transistor", IEEE Journal of the Electron Devices Society, Vol. 6, Issue 1, pp. 1129-1135, Dec. 2018.
    3. D. Rajasekharan, P. Kushwaha, S. S. Chauhan, and Y. S. Chauhan, "Non-Boolean Associative Processing using FDSOI MOSFET-based Inverter", IEEE Transactions on Nanotechnology, Vol. 17, Issue 6, pp. 1235-1242, Nov. 2018.
    4. S. Mishra, N. Parihar, Anandkrishnan R., C. K. Dabhi, Y. S. Chauhan, and S. Mahapatra, "NBTI Related Variability Impact on 14nm Node FinFET SRAM Performance and Static Power: Correlation to Time Zero Fluctuations", IEEE Transactions on Electron Devices, Vol. 65, Issue 11, pp. 4846-4853, Nov. 2018.
    5. G. Pahwa, A. Agarwal, and Y. S. Chauhan, "Numerical Investigation of Short Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior", IEEE Transactions on Electron Devices, Vol. 65, Issue 11, pp. 5130-5136, Nov. 2018.
    6. H. Amrouch, G. Pahwa, A. D. Gaidhane, J. Henkel, and Y. S. Chauhan, "Negative Capacitance Transistor to Address the Fundamental Limitations in Technology Scaling: Processor Performance", IEEE Access, Vol. 6, Issue 1, pp. 52754-52765, Oct. 2018.
    7. C. Gupta, R. Goel and Y. S. Chauhan, "Analysis and Modeling of Current Mismatch in Laterally Non-Uniform MOSFETs", IEEE Transactions on Electron Devices, Vol. 65, Issue 10, pp. 4254-4262, Oct. 2018.
    8. C. Yadav, P. Rastogi, T. Zimmer, and Y. S. Chauhan, "Charge Based Modeling of Transition Metal Dichalcogenide Transistors Including Ambipolar, Trapping and Negative Capacitance Effects", IEEE Transactions on Electron Devices, Vol. 65, Issue 10, pp. 4202-4208, Oct. 2018.
    9. C. Gupta, S. Dey, H. Agarwal, R. Goel, C. Hu, and Y. S. Chauhan, "Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo Implanted MOSFETs", IEEE Transactions on Electron Devices, Vol. 65, Issue 9, pp. 3608-3616, Sept. 2018.
    10. R. Singh, K. Aditya, S. S. Parihar, Y. S. Chauhan, R. Vega, T. B. Hook, and A. Dixit, "Evaluation of 10nm Bulk FinFET RF Performance - Conventional vs. NC-FinFET", IEEE Electron Device Letters, Vol. 39, Issue 8, pp. 1246-1249, Aug. 2018.
    11. C. K. Dabhi, A. Dasgupta, P. Kushwaha, H. Agarwal, C. Hu, and Y. S. Chauhan, "Modeling of Induced Gate Thermal Noise including Back Bias Effect in FD-SOI MOSFET", IEEE Microwave and Wireless Components Letters, Vol. 28, Issue 7, pp. 597-599, July 2018.
    12. P. Kushwaha, H. Agarwal, Y.-K. Lin, M.-Y. Kao, J.-P. Duarte, H.-L. Chang, W. Wong, J. Fan, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Modeling of advanced RF Bulk FinFETs", IEEE Electron Device Letters, Vol. 39, Issue 6, pp. 791-794, June 2018.
    13. A. D. Gaidhane, G. Pahwa, A. Verma, and Y. S. Chauhan, "Compact Modeling of Drain Current, Charges and Capacitances in Long Channel Gate-All-Around Negative Capacitance MFIS Transistor", IEEE Transactions on Electron Devices, Vol. 65, Issue 5, pp. 2024-2032, May 2018.
    14. A. Priydarshi, Y. S. Chauhan, S. Bhowmick, and A. Agarwal, "Strain-tunable charge carrier mobility of atomically thin phosphorus allotropes", Physical Review B, Vol. 97, Issue 11, pp. 115434(1-8), March 2018.
    15. S. Tomar, P. Rastogi, B. S. Bhadoria, S. Bhowmick, Y. S. Chauhan, and A. Agarwal, "Adsorption of magnetic transition metals on borophene: an ab-initio study", European Physical Journal B, 91: 51, pp. 1-6, March 2018.
    16. A. Dasgupta, P. Rastogi, A. Agarwal, C. Hu, and Y. S. Chauhan, "Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition", IEEE Transactions on Electron Devices, Vol. 65, Issue 3, pp. 1094-1100, March 2018.
    17. G. Pahwa, T. Dutta, A. Agarwal, and Y. S. Chauhan, "Physical Insights on Negative Capacitance Transistors in Non-Hysteresis and Hysteresis Regimes: MFMIS vs MFIS Structures", IEEE Transactions on Electron Devices, Vol. 65, Issue 3, pp. 867-873, March 2018.
    18. S. Agnihotri, P. Rastogi, Y. S. Chauhan, A. Agarwal, and S. Bhowmick, "Significant Enhancement of the Stark Effect in Rippled Monolayer Blue Phosphorous", ACS Journal of Physical Chemistry C, 122 (9), pp. 5171-5177, Feb. 2018.
    19. Y.-K. Lin, P. Kushwaha, J. P. Duarte, H.-L. Chang, H. Agarwal, S. Khandelwal, A. B. Sachid, M. Harter, J. Watts, Y. S. Chauhan, S. Salahuddin, and C. Hu, "New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs", IEEE Transactions on Electron Devices, Vol. 65, Issue 2, pp. 463-469, Feb. 2018.
    20. T. Dutta, G. Pahwa, A. Agarwal, and Y. S. Chauhan, "Impact of Process Variations on Negative Capacitance FinFET Devices and Circuits", IEEE Electron Device Letters, Vol. 39, Issue 1, pp. 147-150, Jan. 2018.
      21. Conference Papers:
    21. S. Tomar, P. Rastogi, B. S. Bhadoria, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Thermoelectric Properties of CrI3 Monolayer", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, India, Dec. 2018.
    22. K. Qureshi, G. Pahwa, and Y. S. Chauhan, "Impact of Linear Intergranular Variation in Remnant Polarization on Negative Capacitance Field Effect Transistor", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, India, Dec. 2018.
    23. D. K. Singh, A. Dasgupta, A. K. Agarwal, and Y. S. Chauhan, "Incident Flux Based Monte Carlo Simulation of Silicon and GaAs FETs in Quasi-Ballistic regime", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, India, Dec. 2018.
    24. A. D. Gaidhane, G. Pahwa, A. Verma, and Y. S. Chauhan, "Compact Modeling of Drain Current in Double Gate Negative Capacitance MFIS Transistor", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, India, Dec. 2018.
    25. A. Dasgupta, P. Rastogi, D. Saha, A. Gaidhane, A. Agarwal and Y. S. Chauhan, "Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETs", IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 2018.
    26. B. T. Vankayalapati, R. Nune, S. Anand, Y. S. Chauhan, M. Patel, "Comparison of Si and GaN Power Devices Based SMPS for Satellite Application", IEEE Power Electronics, Drives and Energy Systems Conference, Chennai, India, Dec. 2018.
    27. R. Goel, C. Gupta, and Y. S. Chauhan, "An Empirical Model to Enhance the Flexibility of gm/Id Tuning in BSIM-BULK Model", IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON), Gorakhpur, India, Nov. 2018.
    28. S. Khandelwal, Y. Chauhan, J. Hodges, S. A. Albahrani, "Non-linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model", IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, USA, Oct. 2018. (Invited)
    29. S. Khandelwal and Y. S. Chauhan, "ASM GaN: Industry Standard Compact Model for GaN Power and RF Devices", International Workshop on Power Supply On Chip (PwrSoC), Hsinchu, Taiwan, Oct. 2018,. (Invited)
    30. U. K. Das, G. Eneman, R. Shankar, R. Velampati, Y. S. Chauhan, K. B. Jinesh, T. K. Bhattacharya, "Consideration of UFET Architecture for the 5nm Node and Beyond Logic Transistor", Silicon Nanoelectronics Workshop (SNW). Honolulu, USA, June 2018.
    31. S. Ghosh, S. A. Ahsan, S. Khandelwal, A. Pampori, R. Dangi and Y. S. Chauhan, "ASM-HEMT: A Robust Physics-Based GaN HEMT Model for Power and RF Applications", Workshop on Compact Modeling (WCM), Anaheim, CA, USA, May 2018. (Invited)
    32. P. Kushwaha, J. P. Duarte, Y.-K. Lin, H. Agarwal, H.-L. Chang, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Unified Compact Model for Gate All Around FETs - Nanosheets, Nanowires, Multi Bridge Channel MOSFETs", Workshop on Compact Modeling (WCM), Anaheim, CA, USA, May 2018. (Invited)
    33. S. Tomar, P. Rastogi, B. S. Bhadoria, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Strain Dependent Carrier Mobility in 8−Pmmn Borophene: ab-initio study", IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bengaluru, India, Mar. 2018.
    34. P. Kushwaha, H. Agarwal, C. K. Dabhi, Y.-K. Lin, J. P. Duarte, C. Hu, and Y. S. Chauhan, "A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect", IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bengaluru, India, Mar. 2018.
    35. P. Rastogi, A. Dasgupta, and Y. S. Chauhan, "Diameter Scaling in III-V Gate-All-Around Transistor for Different Cross-Sections", IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bengaluru, India, Mar. 2018. (Best Paper Award)
    36. P. Rastogi, S. Bhowmick, A. Agarwal, and Y. S. Chauhan, "Atomistic Study of Acoustic Phonon Limited Mobility in Extremely Scaled Si and Ge Films", IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bengaluru, India, Mar. 2018.
    37. A. Pampori, S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Physics-based Compact Modeling of MSM-2DEG GaN-based Varactors for THz Applications", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, Japan, Mar. 2018.
    38. D. Rajasekharan, S. S. Chauhan, A. R. Trivedi, and Y. S. Chauhan, "Energy and Area Efficient Tunnel FET-based Spiking Neural Networks", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, Japan, Mar. 2018.

    2017:
      Journal Articles:
    1. M. D. Ganeriwala, C. Yadav, F. G. Ruiz, E. G. Marin, Y. S. Chauhan, N. R. Mohapatra, "Modeling of Quantum Confinement and Capacitance in III-V Gate-All-Around 1D Transistors", IEEE Transactions on Electron Devices, Vol. 64, Issue 12, pp. 4889-4896, Dec. 2017.
    2. S. A. Ahsan, A. Pampori, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "A New Small-signal Parameter Extraction Technique for large gate-periphery GaN HEMTs", IEEE Microwave and Wireless Components Letters, Vol. 27, Issue 10, pp. 918-920, Oct. 2017.
    3. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Physics-based Multi-bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow", IEEE Journal of the Electron Devices Society, Vol. 5, Issue 5, pp. 310-319, Sept. 2017.
    4. T. Dutta, G. Pahwa, A. R. Trivedi, S. Sinha, A. Agarwal, and Y. S. Chauhan, "Performance Evaluation of 7 nm Node Negative Capacitance FinFET based SRAM", IEEE Electron Device Letters, Vol. 38, Issue 8, pp. 1161-1164, Aug. 2017.
    5. P. Jain, C. Yadav, P. Rastogi, A. Agarwal, and Y. S. Chauhan, "Surface Potential based Modeling of Charge, Current, and Capacitances in DGTFET including Mobile Channel Charge and Ambipolar Behaviour", Solid State Electronics, Vol. 134, pp. 74-81, Aug. 2017.
    6. C. Yadav, M. D. Ganeriwala, N. R. Mohapatra, A. Agarwal, and, Y. S. Chauhan, "Compact Modeling of Gate Capacitance in III-V Channel Quadruple-Gate FETs", IEEE Transactions on Nanotechnology, Vol. 16, Issue 4, pp. 703-710, Jul. 2017.
    7. P. Jain, P. Rastogi, C. Yadav, A. Agarwal, and Y. S. Chauhan, "Band-to-Band Tunneling in Γ valley for Ge Source Lateral Tunnel Field Effect Transistor: Thickness scaling", Journal of Applied Physics, Vol. 122, Issue 1, pp. 014502(1-7), Jul. 2017.
    8. B. Ghosh, P. Kumar, A. Thakur, Y. S. Chauhan, S. Bhowmick, and A. Agarwal, "Anisotropic plasmons, excitons and electron energy loss spectroscopy of phosphorene", Physical Review B, Vol. 96, Issue 3, pp. 35422, Jul. 2017.
    9. Y. Sahu, P. Kushwaha, A. Dasgupta, C. Hu, and Y. S. Chauhan, "Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect", IEEE Transactions on Microwave Theory and Techniques, Vol. 65, Issue 7, pp. 2261-2270, Jul. 2017.
    10. A. Dasgupta, A. Agarwal, and, Y. S. Chauhan, "An Improved Model for Quasi-Ballistic Transport in MOSFETs", IEEE Transactions on Electron Devices, Vol. 64, Issue 7, pp. 3032-3036, Jul. 2017.
    11. A. Dasgupta, A. Agarwal, and, Y. S. Chauhan, "Unified Compact Model for Nanowire Transistors including Quantum Effects and Quasi-ballistic Transport", IEEE Transactions on Electron Devices, Vol. 64, Issue 4, pp. 1837-1845, Apr. 2017.
    12. C. Gupta, H. Agarwal, Y. K. Lin, A. Ito, C. Hu and Y. S. Chauhan, "Analysis and Modeling of Zero-VTH Native Devices with Industry Standard BSIM6 Model", Japanese Journal of Applied Physics (Special Issue), Vol. 56, Issue 4S, pp. 04CD09(1-6), Apr. 2017.
    13. P. Rastogi, S. Kumar, S. Bhowmick, A. Agarwal, and Y. S. Chauhan, "Effective Doping of Monolayer Phosphorene by Surface Adsorption of Atoms for Electronic and Spintronic Applications", IETE Journal of Research, Vol. 63, Issue 2, pp. 205-215, Mar. - Apr. 2017. (IETE - S K MITRA MEMORIAL AWARD-2018)
    14. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Pole-Zero Approach to Analyze and Model the Kink in Gain-Frequency Plot of GaN HEMTs", IEEE Microwave and Wireless Components Letters, Vol. 27, Issue 3, pp. 266-268, Mar. 2017.
    15. C. Yadav, M. Agrawal, A. Agarwal, and, Y. S. Chauhan, "Compact Modeling of Charge, Capacitance, and Drain Current in III-V Channel Double Gate FETs", IEEE Transactions on Nanotechnology, Vol. 16, Issue 2, pp. 347-354, Mar. 2017.
    16. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Analysis and Modeling of Cross-Coupling and Substrate Capacitance in GaN HEMTs for Power-Electronic Applications", IEEE Transactions on Electron Devices (Special Issue), Vol. 64, Issue 3, pp. 816-823, Mar. 2017.
    17. G. Pahwa, T. Dutta, A. Agarwal, and Y. S. Chauhan, "Compact Model for Ferroelectric Negative Capacitance Transistor with MFIS Structure", IEEE Transactions on Electron Devices, Vol. 64, Issue 3, pp. 1366-1374, Mar. 2017.
    18. C. Yadav, A. Agarwal, and, Y. S. Chauhan, "Compact Modeling of Transition Metal Dichalcogenide based Thin body Transistors and Circuit Validation", IEEE Transactions on Electron Devices, Vol. 64, Issue 3, pp. 1261-1268, Mar. 2017.
    19. H. Agarwal, C. Gupta, S. Dey, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Anomalous Transconductance in Long Channel Halo Implanted MOSFETs: Analysis and Modeling", IEEE Transactions on Electron Devices, Vol. 64, Issue 2, pp. 376-383, Feb. 2017.
      20. Conference Papers:
    20. S. Ghosh, S. A. Ahsan, S. Khandelwal, A. Pampori, R. Dangi, and Y. S. Chauhan, "Physics Based Analysis and Modeling of Capacitances in a Dual Field Plated Power GaN HEMT", International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, Dec. 2017.
    21. S. A. Ahsan, S. Ghosh, S. Khandelwal, A. Pampori, R. Dangi, and Y. S. Chauhan, "A Scalable Physics-based RF Large Signal Model for Multi-Finger GaN HEMTs", International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, Dec. 2017.
    22. D. Datta, H. Dixit, S. Agarwal, A. Dasgupta, M. Tran, D. Houssameddine, Y. S. Chauhan, D. Shum, and F. Benistant, "Quantitative Model for Switching Asymmetry in Perpendicular MTJ: A Material-Device-Circuit Co-Design", IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 2017.
    23. S. Agnihotri, P. Rastogi, A. Agarwal, and Y. S. Chauhan, "Effect of Substitutional Mg Doping in In0.5Ga0.5N", IEEE Student Conference on Research and Development (SCOReD), Malaysia, Dec. 2017.
    24. S. Khandelwal, S. Ghosh, S. A. Ahsan and Y. S. Chauhan, "Dependence of GaN HEMT AM/AM and AM/PM Non-Linearity on AlGaN Barrier Layer Thickness", IEEE Asia Pacific Microwave Conference (APMC), Kuala Lumpur, Malaysia, Nov. 2017.
    25. S. A. Ahsan, S. Ghosh, S. Khandelwal and Y. S. Chauhan, "Surface-potential-based Gate-periphery-scalable Small-signal Model for GaN HEMTs", IEEE Compound Semiconductor IC Symposium (CSICS), Miami, USA, Oct. 2017.
    26. R. Singh, P. Kushwaha, S. Ghosh, B. Parvais, Y. S. C and A. Dixit, "Characterization and Modeling of N-Channel Bulk FinFETs from DC to High Frequencies", IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hsinchu, Taiwan, Oct. 2017.
    27. A. Dasgupta and Y. S. Chauhan, "Modeling of Flicker Noise in Quasi-ballistic FETs", IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, Sep. 2017.
    28. M. Bhoir, P. Kushwaha, Y. S. Chauhan and N. R. Mohapatra, "Impact of Substrate on the Frequency Behavior of Trans-conductance in Ultra-thin Body and BOX FDSOI MOS Devices – A Physical Insight", IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2017.
    29. C. Gupta, H. Agarwal, C. Hu, and Y. S. Chauhan, "Analysis and Modeling of Capacitances in Halo-Implanted MOSFETs", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan, Feb.-Mar. 2017.
    30. A. Dasgupta, C. Gupta, A. Dutta, Y.-K. Lin, S. Srihari, T. Ethirajan, C. Hu, and Y. S. Chauhan, "Modeling of Body-bias Dependence of Overlap Capacitances in Bulk MOSFETs", IEEE International Conference on VLSI Design, Hyderabad, India, Jan. 2017.

    2016:
      Journal Articles:
    1. G. Pahwa, T. Dutta, A. Agarwal, S. Khandelwal, S. Salahuddin, C. Hu, and Y. S. Chauhan, "Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance - Part I, Model description", IEEE Transactions on Electron Devices, Vol. 63, Issue 12, pp. 4981-4985, Dec. 2016.
    2. G. Pahwa, T. Dutta, A. Agarwal, S. Khandelwal, S. Salahuddin, C. Hu, and Y. S. Chauhan, "Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance - Part II, Model validation", IEEE Transactions on Electron Devices, Vol. 63, Issue 12, pp. 4986-4992, Dec. 2016.
    3. A. Dasgupta, A. Agarwal, Sourabh Khandelwal and, Y. S. Chauhan, "Compact Modeling of Surface Potential, Charge and Current in Nanoscale Transistors under Quasi-Ballistic Regime", IEEE Transactions on Electron Devices, Vol. 63, Issue 11, pp. 4151-4159, Nov. 2016.
    4. P. Kushwaha, A. Dasgupta, Y. Sahu, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Characterization of RF Noise in UTBB FD-SOI MOSFET", IEEE Journal of the Electron Devices Society, Vol. 4, Issue 6, pp. 379-386, Nov. 2016.
    5. M. D. Ganeriwala, C. Yadav, N. R. Mohapatra, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs", IEEE Journal of the Electron Devices Society, Vol. 4, Issue 6, pp. 396-401, Nov. 2016.
    6. P. Kushwaha, S. Khandelwal, J. P. Duarte, C. Hu, and Y. S. Chauhan, "Thermal Resistance Modeling in FDSOI Transistors with Industry Standard Model BSIM-IMG", Elsevier Microelectronics Journal, Vol. 56, pp. 171-176, Oct. 2016.
    7. P. Kumar, Y. S. Chauhan, Amit Agarwal and, S. Bhowmick, "Thickness and Stacking Dependent Polarizability and Dielectric Constant of Graphene–Hexagonal Boron Nitride Composite Stacks", ACS Journal of Physical Chemistry C, Vol. 120, Issue 31, pp. 17620-17626, Aug. 2016.
    8. A. Dasgupta and Y. S. Chauhan, "Modeling of Induced Gate Thermal Noise in HEMTs", IEEE Microwave and Wireless Components Letters, Vol. 26, Issue 6, pp. 428-430, June 2016.
    9. P. Kushwaha, S. Khandelwal, J. P. Duarte, C. Hu, and Y. S. Chauhan, "RF Modeling of FDSOI transistors using Industry Standard BSIM-IMG Model", IEEE Transactions on Microwave Theory and Techniques, Vol. 64, Issue 6, pp. 1745-1751, June 2016.
    10. P. Kumar, B. S. Bhadoria, S. Kumar, S. Bhowmick, and Y. S. Chauhan, and Amit Agarwal, "Thickness and electric field dependent polarizability and dielectric constant in phosphorene", Physical Review B, Vol. 93, Issue 19, pp. 195428(1-8), May 2016.
    11. Y.-K. Lin, S. Khandelwal, A. Medury, H. Agarwal, H.-L. Chang, Y. S. Chauhan, and C. Hu, "Modeling of Sub-surface Leakage Current in Low Vth Short Channel MOSFET at Accumulation Bias", IEEE Transactions on Electron Devices, Vol. 63, Issue 5, pp. 1840-1845, May 2016.
    12. T. Dutta, P. Kumar, P. Rastogi, A. Agarwal, and Y. S. Chauhan, "Atomistic study of band structure and transport in extremely thin channel InP MOSFETs", Physica Status Solidi A (Special issue), Vol 213, Issue 4, pp. 898-904, April 2016.
    13. B. K. Kompala, P. Kushwaha, H. Agarwal, S. Khandelwal, J. P. Duarte, C. Hu and Y. S. Chauhan, "Modeling of Nonlinear Thermal Resistance in FinFETs", Japanese Journal of Applied Physics (Special Issue), Vol. 55, No. 4S, pp. 04ED11(1-5), March 2016.
    14. A. Ojha, Y. S. Chauhan, and N. Mohapatra, "A Channel Stress-Profile based Compact Model for Thereshold Voltage prediction of Uniaxial Strained HKMG nMOS Transistors", IEEE Journal of the Electron Devices Society, Vol. 4, Issue 2, pp. 42-49, March 2016.
    15. T. Dutta, S. Kumar, P. Rastogi, A. Agarwal, and Y. S. Chauhan, "Impact of Channel Thickness Variation on Bandstructure and Source-to-Drain Tunneling in Ultra-Thin Body III-V MOSFETs", IEEE Journal of the Electron Devices Society, Vol. 4, Issue 2, pp. 66-71, March 2016.
    16. S. A. Ahsan, S. Ghosh, A. Dasgupta, K. Sharma, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling in Dual Field Plate Power GaN HEMT for Accurate Switching Behaviour", IEEE Transactions on Electron Devices, Vol. 63, Issue 2, pp. 565-572, Feb. 2016.
    17. S. Khandelwal, H. Agarwal, P. Kushwaha, J. P. Duarte, A. Medury, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport", IEEE Electron Device Letters, Vol. 37, Issue 2, pp. 134-137, Feb. 2016.
    18. H. Agarwal, P. Kushwaha, C. Gupta, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Analysis and Modeling of Flicker Noise in Lateral Asymmetric Channel MOSFETs", Solid State Electronics, Vol. 115, Part A, pp. 33-38, Jan. 2016.
      19. Conference Papers:
    19. S. Ghosh, S. A. Ahsan, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "GaN HEMT Modeling for Power and RF Applications using ASM-HEMT", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    20. G. Pahwa, T. Dutta, A. Agarwal, and Y. S. Chauhan, "Energy-Delay Tradeoffs in Negative Capacitance FinFET based CMOS Circuits", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016. (Best Paper Award)
    21. T. Dutta, B. S. Syamalaraju, S. Bhowmick, Amit Agarwal, and Y. S. Chauhan, "Performance Projection of Mono and Multi-Layer Silicane FETs in the Ballistic Limit", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    22. N. Mohamed, H. Agarwal, C. Gupta, and Y. S. Chauhan, "Compact Modeling of NQS Effect in Bulk MOSFETs for RF Circuit Design in Sub-THz Regime", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    23. D. K. Singh, A. Dasgupta, and Y. S. Chauhan, "Accurate Modeling of Centroid Shift in III-V FETs including Non-linear Potential Profile and Wave-function Penetration", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    24. H. Agarwal, C. Gupta, S. Khandelwal, C. Hu, S. Dey, K. Chan and Y. S. Chauhan, "Analysis and Modeling of Low Frequency Noise in Presence of Doping Non-Uniformity in MOSFETs", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    25. S. Ghosh, A. Dasgupta, A. K. Dutta, S. Khandelwal, and Y. S. Chauhan, "Physics based Modeling of Gate Current including Fowler-Nordheim Tunneling in GaN HEMT", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    26. P. Jain, P. Rastogi, T. Dutta, A. Agarwal, and Y. S. Chauhan, "Impact of Thickness Scaling on Vertical and Lateral Tunneling in Ge Source Tunnel FETs", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    27. S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Statistical Simulation for GaN HEMT Large Signal RF performance using a Physics-based Model", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    28. A. Dasgupta, H. Agarwal, A. Agarwal, and Y. S. Chauhan, "Modeling of Flicker Noise in Quasi-ballistic devices", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    29. Dinesh R., T. Dutta, A. R. Trivedi, and Y. S. Chauhan, "Energy-Efficient Spiking Neural Networks based on Tunnel FET", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    30. C. K. Dabhi, A. Dasgupta, and Y. S. Chauhan, "Computationally efficient Analytical Surface Potential model for UTBB FD-SOI Transistors", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    31. C. K. Dabhi, P. Kushwaha, A. Dasgupta, H. Agarwal, and Y. S. Chauhan, "Impact of Back Plane Doping on RF Performance of FD-SOI Transistor using Industry Standard BSIM-IMG Model", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    32. A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, N. Defrance, and Y. S. Chauhan, "Modeling DC, RF and Noise behavior of GaN HEMTs using ASM-HEMT Compact Model", IEEE International Microwave and RF Conference (IMaRC), Delhi, India, Dec. 2016.
    33. S. A. Ahsan, S. Ghosh, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "ASM-HEMT: Advanced SPICE Model for Gallium Nitride High Electron Mobility Transistors", International Conference of Young Researchers on Advanced Materials (ICYRAM), Bangalore, India, Dec. 2016.
    34. C. Gupta, H. Agarwal, Y. K. Lin, S. Khandelwal, Akira Ito, C. Hu, and Y. S. Chauhan, "Analysis and Modeling of Zero-VTH Devices with Industry Standard BSIM6 Model", International Conference on Solid State Devices and Materials (SSDM2016), Tsukuba, Japan, September 2016.
    35. G. Pahwa, T. Dutta, A. Agarwal, and Y. S. Chauhan, "Designing Energy Efficient and Hysteresis Free Negative Capacitance FinFET with Negative DIBL and 3.5X ION using Compact Modeling Approach", IEEE European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, Sept. 2016. (Invited)
    36. S. Ghosh, S. A. Ahsan, S. Khandelwal and Y. S. Chauhan, "Modeling of Source/Drain Access Resistances and their Temperature Dependence in GaN HEMTs", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.
    37. S. A. Ahsan, S. Ghosh, S. Khandelwal and Y. S. Chauhan, "Modeling of Kink-Effect in RF Behaviour of GaN HEMTs using ASM-HEMT Model", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.
    38. C. Gupta, H. Agarwal, R. Gillon, S. Khandelwal, Y.-K. Lin, C. Hu and Y. S. Chauhan, "Modeling of High Voltage LDMOSFET using Industry Standard BSIM6 MOS Model", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.
    39. P. Kushwaha, R. Agarwal, H. Agarwal, S. Khandelwal, J. P. Duarte, Y.-K. Lin, H.-L. Chang, C. Hu and Y. S. Chauhan, "Modeling of Threshold Voltage for Operating Point using Industry standard BSIM-IMG Model", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.
    40. P. Kushwaha, H. Agarwal, M. Bhoir, N. R. Mohapatra, S. Khandelwal, J. P. Duarte, Y.-K. Lin, H.-L. Chang, C. Hu and Y. S. Chauhan, "Predictive Effective Mobility Model for FDSOI Transistors using Technology Parameters", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.
    41. H. Agarwal, P. Kushwaha, S. Khandelwal, J. P. Duarte, Y.-K. Lin, H.-L. Chang, C. Hu, H. Wu, P. D. Ye and Y. S. Chauhan, "Modeling of GeOI and Validation with Ge-CMOS Inverter Circuit using BSIM-IMG Industry Standard Model", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016.
    42. R. Nune, A. Anurag, S. Anand and Y. S. Chauhan, "Comparative Analysis of Power Density in Si MOSFET and GaN HEMT based Flyback Converters", IEEE International Conference on Compatibility and Power Electronics, Bydgoszcz, Poland, June 2016.
    43. J. P. Duarte, S. Khandelwal, Y. S. Chauhan, and C. Hu, "Modeling Independent Multi-Gate MOSFET", Workshop on Compact Modeling, Washington DC, May 2016. (Invited)
    44. C. Yadav, A. Dutta, S. Sirohi, T. Ethirajan, and Y. S. Chauhan, "Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence", IEEE International Conference on VLSI Design, Kolkata, India, Jan. 2016.
    45. C. Yadav, A. Agarwal, and Y. S. Chauhan, "Analysis of Quantum Capacitance Effect in Ultra-Thin-Body III-V Transistor", IEEE International Conference on VLSI Design, Kolkata, India, Jan. 2016.

    2015:
      Journal Articles:
    1. C. Yadav, J. P. Duarte, S. Khandelwal, A. Agarwal, C. Hu, and Y. S. Chauhan, "Capacitance Modeling in III-V FinFETs", IEEE Transactions on Electron Devices, Vol. 62, Issue 11, pp. 3892-3897, Nov. 2015.
    2. P. Rastogi, T. Dutta, S. Kumar, A. Agarwal, Y. S. Chauhan, "Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETs", IEEE Transactions on Electron Devices, Vol. 62, Issue 11, pp. 3575-3680, Nov. 2015.
    3. S. Khandelwal, H. Agarwal, J. P. Duarte, K. Chan, S. Dey, Y. S. Chauhan, and C. Hu, "Modeling STI Edge Parasitic Current for Accurate Circuit Simulations", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 34, Issue 8, pp. 1291-1294, Aug. 2015.
    4. S. Khandelwal, J. P. Duarte, A. Medury, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Modeling SiGe FinFETs with Thin Fin and Current Dependent Source/Drain Resistance", IEEE Electron Device Letters, Vol. 36, Issue 7, pp. 636-638, July 2015.
    5. A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Surface potential based Modeling of Thermal Noise for HEMT circuit simulation", IEEE Microwave and Wireless Components Letters, Vol. 25, Issue 6, pp. 376-378, June 2015.
    6. H. Agarwal, S. Khandelwal, S. Dey, C. Hu, and Y. S. Chauhan, "Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs", IEEE Journal of Electron Devices Society, Vol. 3, Issue 4, pp. 355-360, April 2015.
    7. H. Agarwal, C. Gupta, P. Kushwaha, C. Yadav, J. P. Duarte, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model", IEEE Journal of the Electron Devices Society, Vol. 3, Issue 3, pp. 240,243, March 2015.
    8. P. Kushwaha, N. Paydavosi, S. Khandelwal, C. Yadav, H. Agarwal, J. P. Duarte, C. Hu, and Y. S. Chauhan, "Modeling the Impact of Substrate Depletion in FDSOI MOSFETs", Solid State Electronics, Vol. 104, Issue 2, pp. 6-11, Feb. 2015.
    9. S. Ghosh, A. Dasgupta, S. Khandelwal, S. Agnihotri, and Y. S. Chauhan, "Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, Vol. 62, Issue 2, pp. 443-448, Feb. 2015.
      10. Conference Papers:
    10. S. Agnihotri, S. Ghosh, A. Dasgupta, A. Ahsan, S. Khandewal, and Y. S. Chauhan, "Modeling of Trapping Effects in GaN HEMTs", IEEE India Conference (INDICON), New Delhi, India, Dec. 2015.
    11. C. Gupta, H. Agarwal, Akira Ito, S. Ghosh, P. Khushwaha, C. Hu, and Y. S. Chauhan, "Modeling of Zero-Vth MOSFET with Industry Standard BSIM6 Model", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    12. G. Pahwa, A. Agarwal, and Y. S. Chauhan, "Compact Modeling of Negative Capacitance Transistor with Experimental Validation", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    13. C. Yadav, A. Agarwal, and Y. S. Chauhan, "Compact Modeling of Charge Density and Capacitance in III-V channel Double Gate FETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    14. A. Dasgupta, A. Agarwal, and Y. S. Chauhan, "Compact Model for charge centroid in III-V FETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    15. S. Ghosh, S. Agnihotri, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Analysis and Modeling of Trapping Effects in RF GaN HEMTs under Pulsed Conditions", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    16. S. Agnihotri, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Impact of Gate Field Plate on DC, C-V, and Transient Characteristics of Gallium Nitride HEMTs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    17. K. Sharma, S. Ghosh, A. Dasgupta, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Capacitance Analysis of Field Plated GaN HEMT", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    18. A. Dasgupta, A. Agarwal, and Y. S. Chauhan, "Compact Modeling of Quasi-Ballistic transport in FETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    19. Y. Sahu, P. Kushwaha, J. P. Duarte, S. Khandelwal, C. Hu and Y. S. Chauhan, "Compact Modelling of Drain Current Thermal Noise in FDSOI MOSFETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    20. P. Kushwaha, S. Khandelwal, C. Hu and Y. S. Chauhan, "Recent Updates in Industry Standard BSIM-IMG Model for FDSOI Transistors", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    21. T. Dutta, M. Agrawal, A. Agarwal and Y. S. Chauhan, "Wavefunction Penetration Effects in Extremely Scaled III-V MOSFETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    22. N. Mohamed, H. Agarwal, C. Gupta, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Scaling Capabilities of Industry-Standard BSIM6 MOSFET Model", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    23. H. Agarwal, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Analysis and Modeling of Assymetric Channel MOSFET", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    24. S. A. Ahsan, S. Ghosh, J. Bandarupalli, S. Khandelwal, and Y. S. Chauhan, "Physics based large signal modeling for RF performance of GaN HEMTs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    25. P. Rastogi, A. Agarwal, S. Bhowmick, and Y. S. Chauhan, "Doping Behavior via Adsorption in Monolayer Black Phosphorous", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
    26. S. Khandelwal, S. Ghosh, Y. S. Chauhan, B. Iniguez, T. A. Fjeldly and C. Hu, "Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs", IEEE Compound Semiconductor IC Symposium (CSICS), New Orleans, USA, Oct. 2015.
    27. B. K. Kompala, P. Kushwaha, S. Khandelwal, J. P. Duarte, A. Medury, C. Hu, and Y. S. Chauhan, "Modeling of Nonlinear Thermal Resistance in FinFET", International Conference on Solid State Devices and Materials (SSDM2015), Sapporo, Japan, September 2015.
    28. J. P. Duarte, S. Khandelwal, A. Medury, C. Hu, P. Kushwaha, H. Agarwal, A. Dasgupta, and Y. S. Chauhan "BSIM-CMG: Standard FinFET Compact Model for Advanced Circuit Design", IEEE European Solid-State Circuit Conference (ESSCIRC), Graz, Austria, Sept. 2015. (Invited)
    29. P. Rastogi, T. Dutta, S. Kumar, A. Agarwal, Y. S. Chauhan, "Confinement Effects on Germanium Band-structure for UTB MOSFET", SRC TECHCON, Austin, USA, September 2015.
    30. P. Kushwaha, J. P. Duarte, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Thermal Resistance Scaling with Number of fins in FinFET", SRC TECHCON, Austin, USA, September 2015.
    31. C. Yadav, A. Agarwal, Y. S. Chauhan, "Simulation study of gate capacitance with back bias effects in III-V UTB devices", SRC TECHCON, Austin, USA, September 2015.
    32. P. Kushwaha, H. Agarwal, S. Khandelwal, J. P. Duarte, A. Medury, C. Hu and Y. S. Chauhan, "BSIM-IMG: Compact Model for RF-SOI MOSFETs", IEEE Device Research Conference (DRC), Columbus, USA, June 2015.
    33. S. A. Ahsan, S. Ghosh, K. Sharma, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling of a GaN HEMT with Gate and Source Field Plates", IEEE International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, June 2015.
    34. A. Dasgupta and Y. S. Chauhan, "Surface Potential Based Modeling of Induced Gate Thermal Noise for HEMTs", IEEE International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, June 2015.
    35. S. Khandelwal, Y. S. Chauhan, B. Iniguez, and T. Fjeldly, "RF Large Signal Modeling of Gallium Nitride HEMTs with Surface-Potential Based ASM-HEMT Model", IEEE International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, June 2015. (Invited)
    36. P. Rastogi, T. Dutta, S. Kumar, A. Agarwal, and Y. S. Chauhan, "First Principle Study of Quantization Effects on UTB InP MOSFET", IEEE International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, June 2015.
    37. A. Dasgupta, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "ASM-HEMT: Compact model for GaN HEMTs", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, June 2015.
    38. K. Sharma, A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Effect of Access Region and Field Plate on Capacitance behavior of GaN HEMT", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, June 2015.
    39. S. Khandelwal, J. P. Duarte, A. Medury, Y. S. Chauhan, and C. Hu, "New Industry Standard FinFET Compact Model for Future Technology Nodes", IEEE VLSI Technology symposium, Kyoto, June 2015.

    2014:
      Journal Articles:
    1. P. Rastogi, S. Kumar, S. Bhowmick, A. Agarwal, and Y. S. Chauhan, "Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study", ACS Journal of Physical Chemistry C, Vol. 118, pp. 30309-30314, Dec. 2014.
    2. A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Compact Modeling of Flicker Noise in HEMTs", IEEE Journal of the Electron Devices Society, Vol. 2, Issue 6, pp. 174-178, Nov. 2014.
    3. C. Yadav, P. Kushwaha, S. Khandelwal, J. P. Duarte, Y. S. Chauhan, and C. Hu, "Modeling of GaN based Normally-off FinFET", IEEE Electron Device Letters, Vol. 35, Issue 6, pp. 612-614, June 2014.
    4. S. Khandelwal, J. P. Duarte, Y. S. Chauhan, and C. Hu, "Modeling 20nm Germanium FinFET with the Industry Standard FinFET Model", IEEE Electron Device Letters, Vol. 35, Issue 7, pp. 711-713, July 2014.
    5. Y. S. Chauhan, S. Venugopalan, M.-A. Chalkiadaki, M. A. Karim, H. Agarwal, S. Khandelwal, N. Paydavosi, J. P. Duarte, C. C. Enz, A. M. Niknejad, and C. Hu, "BSIM6: Analog and RF Compact Model for Bulk MOSFET", IEEE Transactions on Electron Devices, Vol. 61, Issue 2, pp. 234-244, Feb. 2014. (Invited)
      6. Conference Papers:
    6. P. Kushwaha, C. Yadav, H. Agarwal, J. Srivatsava, S. Khandelwal, J. P. Duarte, C. Hu, and Y. S. Chauhan, "BSIM-IMG with Improved Surface Potential Calculation Recipe", IEEE India Conference (INDICON), Pune, India, Dec. 2014. (Best Paper Award)
    7. C. Yadav, P. Kushwaha, H. Agarwal, and Y. S. Chauhan, "Threshold Voltage Modeling of GaN Based Normally-Off Tri-gate Transistor", IEEE India Conference (INDICON), Pune, India, Dec. 2014.
    8. S. Ghosh, K. Sharma, S. Khandelwal, S. Agnihotri, T. A. Fjeldly, F. M. Yigletu, B. Iniguez, and Y. S. Chauhan, "Modeling of Temperature Effects in a Surface-Potential Based ASM-HEMT model", IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, Dec. 2014.
    9. P. Rastogi, S. Kumar, A. Agarwal, and Y. S. Chauhan, "Ab-initio study of doping versus adatom in monolayer MoS2", IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, Dec. 2014.
    10. A. Dasgupta, C. Yadav, P. Rastogi, A. Agarwal, and Y. S. Chauhan, "Analysis and Modeling of Quantum Capacitance in III-V Transistors", IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, Dec. 2014. (Best Poster Award)
    11. Y. S. Chauhan, P. Kushwaha, S. Khandelwal, C. Yadav, N. Paydavosi, J. P. Duarte, and C. Hu, "BSIMIMG: COMPACT MODEL FOR UTBBSOI MOSFETs", Workshop on Compact Modeling (WCM), Washington D.C., USA, June 2014. (Invited)
    12. S. Khandelwal, J. P. Duarte, N. Paydavosi, Y. S. Chauhan, J. J. Gu, M. Si, P. D. Ye, and C. Hu, "InGaAs FinFET Modeling Using Industry Standard Compact Model BSIM-CMG", Workshop on Compact Modeling (WCM), Washington D.C., USA, June 2014.
    13. A. Dutta, S. Sirohi, T. Ethirajan, H. Agarwal, Y. S. Chauhan, and R. Q Williams, "BSIM6 - Benchmarking the Next Generation MOSFET Model for RF Applications", IEEE International Conference on VLSI Design, Mumbai, India, Jan. 2014.

    2013:
      Journal Articles:
    1. S. Khandelwal, C. Yadav, S. Agnihotri, Y. S. Chauhan, A. Curutchet, T. Zimmer, J.-C. Dejaeger, N. Defrance and T. A. Fjeldly, "A Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design", IEEE Transactions on Electron Devices, Vol. 60, Issue 10, pp. 3216-3222, Oct. 2013.
    2. N. Paydavosi, S. Venugopalan, Y. S. Chauhan, J. P. Duarte, S. Jandhyala, A. M. Niknejad, and C. Hu, "BSIM - SPICE Models Enable FinFET and UTB IC Designs", IEEE Access, Vol. 1, pp. 1527-1539, May 2013.
    3. S. Khandelwal, S. Sharma, Y. S. Chauhan, T. Gneiting, and T. A. Fjeldly, "Modeling and Simulation Methodology for SOA Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETs", IEEE Transactions on Electron Devices, Vol. 60, Issue 2, pp. 714-718, Feb. 2013.
      4. Conference Papers:
    4. J. R. Sahoo, H. Agarwal, C. Yadav, P. Kushwah, S. Khandewal, R. Gillon, and Y. S. Chauhan, "High Voltage LDMOSFET Modeling using BSIM6 as Intrinsic-MOS Model", IEEE PrimeAsia, Visakhapatnam, Dec. 2013. (Gold Leaf Certificate)
    5. S. Agnihotri, S. Ghosh, A. Dasgupta, S. Khandewal, and Y. S. Chauhan, "A Surface Potential based Model for GaN HEMTs", IEEE PrimeAsia, Visakhapatnam, Dec. 2013. (Gold Leaf Certificate)
    6. H. Agarwal, S. Venugopalan, M. Chalkiadaki, N. Paydavosi, J. P. Duarte, S. Agnihotri, C. Yadav, P. Kushwaha, Y. S. Chauhan, C. C. Enz, A. Niknejad and C. Hu, "Recent Enhancements in BSIM6 Bulk MOSFET Model", IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, Sept. 2013.
    7. Y. S. Chauhan, S. Venugopalan, N. Paydavosi, P. Kushwaha, S. Jandhyala, J. P. Duarte, S. Agnihotri, C. Yadav, H. Agarwal, A. Niknejad, and C. Hu, "BSIM Compact MOSFET Models for SPICE Simulation", IEEE International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Gdynia, Poland, June 2013. (Invited)

    2012:
      Journal Articles:
    1. S. Khandelwal, Y. S. Chauhan, and T. A. Fjeldly, "Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices", IEEE Transactions on Electron Devices, Vol 59, Issue 10, 2856-2860, Oct. 2012.
    2. M. A. Karim, Y. S. Chauhan, S. Venugopalan, A. B. Sachid, D. D. Lu, B.-Y. Nguyen, O. Faynot, A. M. Niknejad, and C. C. Hu, "Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs", IEEE Electron Device Letters, Vol. 33, No. 9, pp. 1306-1308, Sept. 2012.
    3. S. Khandelwal, Y. S. Chauhan, D. D. Lu, S. Venugopalan, M. A. Karim, A. B. Sachid, B.-Y. Nguyen, O. Rozeau, O. Faynot, A. M. Niknejad, and C. C. Hu, "BSIM-IMG: A Compact Model for Ultra-Thin Body SOI MOSFETs with Back-Gate Control", IEEE Transactions on Electron Devices, Vol. 59, Issue 8, pp. 2019-2026, Aug. 2012.
      4. Conference Papers:
    4. C. Hu, A. Niknejad, Sriramkumar V., D. Lu, Y. S. Chauhan, M. Karim, A. Sachid, "BSIM-IMG: A Turnkey compact model for fully depleted technologies", IEEE International SOI Conference, Napa, USA, Oct. 2012. (Invited)
    5. M.-A. Chalkiadaki, A. Mangla, C. C. Enz, Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Niknejad, and C. Hu, "Evaluation of the BSIM6 Compact MOSFET Modelʹs Scalability in 40nm CMOS Technology", IEEE European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, Sept. 2012.
    6. Y. S. Chauhan, S. Venugopalan, M. A. Karim, S. Khandelwal, N. Paydavosi, P. Thakur, A. M. Niknejad, and C. C. Hu, "BSIM - Industry Standard Compact MOSFET Models", IEEE European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, Sept. 2012. Slides (Invited)
    7. Y. S. Chauhan, M. A. Karim, S. Venugopalan, S. Khandelwal, P. Thakur, N. Paydavosi, A. B. Sachid, A. Niknejad, and C. Hu, "BSIM6: Symmetric Bulk MOSFET Model", Workshop on Compact Modeling (WCM), Santa Clara, USA, June 2012. (Invited)
    8. S. Khandelwal, Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, and C. Hu, "Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control", Workshop on Compact Modeling (WCM), Santa Clara, USA, June 2012.
    9. S. Khandelwal, Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, and C. Hu, "Analysis and Modeling of Vertical Non-uniform Doping in Bulk MOSFETs for Circuit Simulations", IEEE International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico, March 2012.

    2011:
      Conference Papers:
    1. S. Venugopalan, Y. S. Chauhan, D. D. Lu, M. A. Karim, A. M. Niknejad, and C. Hu, "Modeling Intrinsic and Extrinsic Asymmetry of 3D Cylindrical Gate/ Gate-All-Around FETs for Circuit Simulations", IEEE Non-Volatile Memory Technology Symposium (NVMTS), Shanghai, China, Nov. 2011.
    2. Y. S. Chauhan, D. D. Lu, S. Venugopalan, M. A. Karim, A. Niknejad, and C. Hu, "Compact Models for sub-22nm MOSFETs", Workshop on Compact Modeling (WCM), Boston, USA, June 2011. (Invited)
    3. M. A. Karim, S. Venugopalan, Y. S. Chauhan, D. Lu, A. Niknejad, and C. Hu, "Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs", Workshop on Compact Modeling (WCM), Boston, USA, June 2011.

    2010:
      Conference Papers:
    1. S. Parthasarathy, A. Trivedi, S. Sirohi, R. Groves, M. Carroll, D. Kerr, A. Tombak, P. Mason, and Y. S. Chauhan, "RF SOI Switch FET Design and Modeling tradeoffs for GSM Applications", IEEE International Conference on VLSI Design, Bangalore, India, Jan. 2010.

    2008:
      Journal Articles:
    1. K. Akarvardar, H.S. Philip Wong, C. Eggimann, D. Tsamados, Y. S. Chauhan, and A. M. Ionescu, "Analytical Modeling of the Suspended-Gate FET and Design Insights for Low Power Logic", IEEE Transactions on Electron Devices, Vol. 55, No. 1, pp. 48-59, Jan. 2008.
    2. D. Tsamados, Y. S. Chauhan, C. Eggimann, K. Akarvardar, H.S. Philip Wong, and A. M. Ionescu, "Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters", Solid State Electronics, Vol. 52, Issue 9, pp. 1374-1381, Sept. 2008.
    3. Y. S. Chauhan, R. Gillon, M. Declercq, and A. M. Ionescu, "Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs", IETE Technical Review, Vol. 25, Issue 5, pp. 244-250, Sept.-Oct 2008.
    4. A. Rusu, M. Mazza, Y. S. Chauhan, and A. M. Ionescu, "Oscillator Based on Suspended Gate MOS Transistors", Romanian Journal of Information Science and Technology, Vol. 11, No. 4, pp. 423-433, 2008.
      5. Conference Papers:
    5. Y. S. Chauhan, D. Tsamados, N. Abele, C. Eggimann, M. Declercq, and A. M. Ionescu, "Compact Modeling of Suspended Gate FET", IEEE International Conference on VLSI Design, Hyderabad, India, Jan. 2008. (Honorable Mention Award)

    2007:
      Journal Articles:
    1. Y. S. Chauhan, F. Krummenacher, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "Compact Modeling of Lateral Non-uniform doping in High-Voltage MOSFETs", IEEE Transactions on Electron Devices, Vol. 54, No. 6, pp. 1527-1539, June 2007.
    2. Y. S. Chauhan, R. Gillon, B. Bakeroot, F. Krummenacher, M. Declercq, and A. M. Ionescu, "An EKV-based High Voltage MOSFET Model with improved mobility and drift model", Solid State Electronics, Vol. 51, Issues 11-12, pp. 1581-1588, Nov.-Dec. 2007. (Invited)
      3. Conference Papers:
    3. A. Rusu, M. Mazza, Y. S. Chauhan, and A. M. Ionescu, "MHz Oscillator based on Vibrating Gate MOS Transistor", IEEE International Semiconductor Conference, Sinaia, Romania, Oct. 2007.
    4. D. Tsamados, Y. S. Chauhan, C. Eggimann, K. Akarvardar, H.S. Philip Wong, and A. M. Ionescu, "Numerical and analytical simulations of Suspended Gate - FET for ultra-low power inverters", IEEE European Solid-State Device Research Conference (ESSDERC), Munich, Germany, Sept. 2007.
    5. Y. S. Chauhan, R. Gillon, M. Declercq, and A. M. Ionescu, "Impact of Lateral Non-uniform doping and hot carrier degradation on Capacitance behavior of High Voltage MOSFETs", IEEE European Solid-State Device Research Conference (ESSDERC), Munich, Germany, Sept. 2007.
    6. D. Tsamados, Y. S. Chauhan, C. Eggimann, and A. M. Ionescu, "Suspended-gate FET as a sleep transistor for ultra-low stand-by power applications", ACM Proceedings of the 2nd international conference on Nano-Networks (Nano-Net), Catania, Italy, Sept. 2007.
    7. K. Akarvardar, C. Eggimann, D. Tsamados, Y. Chauhan, A. M. Ionescu, and H.S. Philip Wong, "Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic", IEEE Device Research Conference (DRC), Bend, USA, June 2007.
    8. W. Grabinski, T. Grasser, G. Gildenblat, G. Smit, M. Bucher, A. C. T. Aarts, A. Tajic, Y. S. Chauhan, A. Napieralski, T. A. Fjeldly, B. Iniguez, G. Iannaccone, M. Kayal, W. Posch, G. Wachutka, F. Pregaldiny, C. Lallement, and L. Lemaitre, "MOS-AK: Open Compact Modeling Forum", International Workshop on Compact Modeling (IWCM), Yokohama, Japan, Jan. 2007.
    9. Y. S. Chauhan, F. Krummenacher, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling", IEEE International Conference on VLSI Design, Banglore, India, Jan. 2007.

    2006:
      Journal Articles:
    1. Y. S. Chauhan, C. Anghel, F. Krummenacher, C. Maier, R. Gillon, B. Bakeroot, B. Desoete, S. Frere, A. Baguenier Desormeaux, A. Sharma, M. Declercq, and A. M. Ionescu,"Scalable General High Voltage MOSFET Model including Quasi-Saturation and Self-Heating effect", Solid State Electronics, Vol. 50, Issues 11-12, pp. 1801-1813, Nov.-Dec. 2006.
    2. C. Anghel, B. Bakeroot, Y. S. Chauhan, R. Gillon, C. Maier, P. Moens, J. Doutreloigne, and A. M. Ionescu, "New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement", IEEE Electron Device Letters, Vol. 27, No. 7, pp. 602-604, July 2006.
      3. Conference Papers:
    3. Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs", IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2006. Slides
    4. A. S. Roy, Y. S. Chauhan, C. C. Enz, and J.-M. Sallesse, "Noise Modeling in Lateral Asymmetric MOSFET", IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2006.
    5. Y. S. Chauhan, C. Anghel, F. Krummenacher, A. M. Ionescu, M. Declercq, R. Gillon, S. Frere, and B. Desoete,"A Highly Scalable High Voltage MOSFET Model", IEEE European Solid-State Device Research Conference (ESSDERC), Montreux, Switzerland, Sept. 2006. Slides
    6. A. S. Roy, Y. S. Chauhan, J.-M. Sallesse, C. C. Enz, A. M. Ionescu, and M. Declercq, "Partitioning Scheme in the Lateral Asymmetric MOST", IEEE European Solid-State Device Research Conference (ESSDERC), Montreux, Switzerland, Sept. 2006.
    7. Y. S. Chauhan, C. Anghel, F. Krummenacher, R. Gillon, A. Baguenier, B. Desoete, S. Frere, A. M. Ionescu, and M. Declercq, "A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor", IEEE International Symposium on Quality Electronic Design (ISQED), San Jose, USA, March 2006.

    2005:
      Conference Papers:
    1. C. Anghel, Y. S. Chauhan, N. Hefyene, and A. M. Ionescu, "A Physical Analysis of High Voltage MOSFET Capacitance Behaviour", IEEE International Symposium on Industrial Electronics (ISIE), Dubrovnik, Croatia, June 2005.

    2003:
      Conference Papers:
    1. B. Mazhari, and Y. S. Chauhan, "Design of current-Programmed amorphous-Silicon AMOLED Pixel Circuit", The 8th Asian Symposium on Information Display, China, 2003.
    2. B. Mazhari, and Y. S. Chauhan, "A New Negative Feedback based poly-Silicon AMOLED Pixel Circuit with Highly Linear Transfer Characteristics", 10th International Display Workshop, Fukuoka, Japan, 2003.

    Invited/Contributed Presentations:
    1. Y. S. Chauhan,"Industry Standard ASM-HEMT Model for Power and RF Circuit Design", Mini Colloquia (MQ) on "Advances in III-N Devices and Systems" at IEEE EDS Delhi Chapter, July 2022.
    2. Y. S. Chauhan,"Compact Modeling of FinFET and Nanosheet Transistors for 5nm Node and beyond", 26th International Symposium on VLSI Design and Test (VDAT-2022), Jammu, July 2022.
    3. Y. S. Chauhan,"Modeling and Simulation of Negative Capacitance Transistors", IEEE-EDS Chapter - MP Section, Indore, May 2022.
    4. Y. S. Chauhan,"Modeling and Simulation of Negative Capacitance Transistors", Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Kancheepuram, Oct. 2021.
    5. Y. S. Chauhan,"Modeling and Simulation of Negative Capacitance Transistors", Dhaka University, Dhaka, Aug. 2021.
    6. Y. S. Chauhan,"Modeling and Simulation of Negative Capacitance Transistors", Peking University, Shenzhen, May 2021.
    7. Y. S. Chauhan,"Physics and Modeling of FinFETand Nanosheet Transistors for Advanced Technology Nodes", IISc Bangalore, May 2021.
    8. Y. S. Chauhan,"Physics and Modeling of FinFETand Nanosheet Transistors", TH Mittelhessen University of Applied Sciences, Germany, Mar. 2021.
    9. Y. S. Chauhan,"Physical Insights into the Operation of Negative Capacitance Transistors", Tezpur University, Feb. 2021.
    10. Y. S. Chauhan,"RF Wireless, 5G and GaN HEMT: Characterization and Modeling using ASM-HEMT", NIT Meghalaya, Feb. 2021.
    11. Y. S. Chauhan,"An introduction to RF Microelectronics", IIT Guwahati, Feb. 2021.
    12. Y. S. Chauhan,"GaN HEMT Characterization and Modeling using ASM-HEMT", IIT Guwahati, Feb. 2021.
    13. Y. S. Chauhan,"Physical Insights into the Operation of Negative Capacitance Transistors", IIT Indore, Dec. 2020.
    14. Y. S. Chauhan,"BSIM-BULK: Industry Standard SPICE Model for Analog, RF & High Voltage Applications", IEEE EDS Mini-Colloquim on Compact Modeling, URV Tarragona, Spain, Dec. 2020.
    15. Y. S. Chauhan,"Negative Capacitance Transistors - Modeling, Simulation and Processor Performance", IEEE International Conference on Emerging Electronics (ICEE), Delhi, India, Nov. 2020.
    16. Y. S. Chauhan,"GaN HEMT Characterization and Modeling using ASM-HEMT", NIT Silchar, October 2020.
    17. Y. S. Chauhan,"Ferroelectric Negative Capacitance Transistors for Emerging Technologies", IIT Patna, October 2020.
    18. A. Pampori and Y. S. Chauhan,"GaN HEMT Characterization and Modeling using ASM-HEMT", Keysight Design Forum, Tokyo, Japan, Sept. 2020.
    19. Y. S. Chauhan,"Physics and Modeling of Nano-Transistors", Jaypee Institute of Information Technology, July 2020.
    20. Y. S. Chauhan,"SPICE and Compact Modeling", Punjab Engineering College, June 2020.
    21. Y. S. Chauhan,"Physics and Modeling of Nano-Transistors", Punjab Engineering College, June 2020.
    22. Y. S. Chauhan,"ASM-HEMT GaN Model", International Microwave Symposium (IMS), Boston, USA, June 2019. Video
    23. Y. S. Chauhan,"Fundamentals and Recent Progress in Negative Capacitance Transistors", IEEE MOS-AK conference, Chengdu, China, June 2019.
    24. Y. S. Chauhan,"Negative Capacitance Transistors - Modeling, Simulation and Processor Performance", IEEE MOS-AK conference, Hyderabad, India, Feb. 2019.
    25. Y. S. Chauhan,"Negative Capacitance Transistors to Continue CMOS Scaling", IEEE EDS Distinguished Lecture, BUET Dhaka, Bangladesh, Dec. 2018.
    26. Y. S. Chauhan,"Atomistic Simulation and Compact Modeling of Atomically Thin Transistors", IEEE International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, Dec. 2018.
    27. Y. S. Chauhan,"Modeling and Simulation of FinFET and Nanosheet Transistors", IEEE EDS Distinguished Lecture, Santa Clara, USA, Nov. 2018.
    28. Y. S. Chauhan,"Nanoscale Transistors for Integrated Circuits", UPCON, Madan Mohan Malviya University of Technology Gorakhpur, India, Nov. 2018.
    29. Y. S. Chauhan,"Physics and Modeling of Negative Capacitance Transistors", New York University, New York, USA, Sept. 2018.
    30. Y. S. Chauhan,"Negative Capacitance MOSFETs for Future Technology Nodes", Kalyani Engineering College, Kalyani, India, Jul. 2018.
    31. Y. S. Chauhan,"ASM-GaN: Industry Standard GaN HEMT Compact Model for Power-Electronics and RF Applications", Synopsys Users Group (SNUG), Bengaluru, India, Jul. 2018.
    32. Y. S. Chauhan,"Negative Capacitance Transistors - Physics, Modeling and Processor Performance at VDD = 0.4V", IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bengaluru, India, Mar. 2018.
    33. Y. S. Chauhan,"Circuit Simulation and SPICE", Madan Mohan Malviya University of Technology Gorakhpur, India, Mar. 2018.
    34. Y. S. Chauhan,"Negative Capacitance MOSFETs for Future Technology Nodes", National Institute of Science and Technology, Behrampur, India, Feb. 2018.
    35. Y. S. Chauhan,"ASM-HEMT: Industry Standard Compact Model for GaN HEMTs", International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, Dec. 2017.
    36. Y. S. Chauhan,"Negative Capacitance MOSFETs for Future Technology Nodes", University of Calcutta, India, Nov. 2017.
    37. Y. S. Chauhan,"ASM-HEMT: Industry Standard Compact Modeling of GaN HEMTs for High Frequency and High Power Applications", NIT Silchar, India, Nov. 2017.
    38. Y. S. Chauhan,"SPICE and Compact Modeling", IIT-BHU, India, Jul. 2017.
    39. Y. S. Chauhan,"Compact Modeling of GaN HEMTs", SPIE lecture, IIT Roorkee, India, May 2017.
    40. Y. S. Chauhan,"Industry Standard Compact Modeling", IEEE Workshop on Compact Modeling, IIT Kanpur, India, Mar. 2017.
    41. Y. S. Chauhan,"Transistor Modeling for IC Design", University Institute of Engineering and Technology, Kanpur, India, Jan. 2017.
    42. Y. S. Chauhan,"Modeling of Nanoscale Transistors for IC Design", National Institute of Technology, Goa, India, Jan. 2017.
    43. C. Yadav and Y. S. Chauhan, "Modeling of Transition Metal Dichalcogenide Transistors for SPICE Simulation", MOS-AK Workshop, Berkeley, USA, Dec. 2016.
    44. Y. S. Chauhan,"Modeling of futuristic FinFETand Nanowire transistors", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
    45. Y. S. Chauhan,"Modeling of high power and high frequency GaN-HEMTs using ASM-HEMT compact model", International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2016), Bangalore, Dec. 2016.
    46. Y. S. Chauhan, "Negative Capacitance Transistor - Breaking 60mV/decade barrier in conventional CMOS process", IEEE Workshop on Electron Devices, Allahabad, Nov. 2016.
    47. A. Ahsan, S. Ghosh, S. Khandelwal, MA Long and, Y. S. Chauhan, "ASM-HEMT Model for GaN RF and Power Electronic Applications: Overview and Extraction", MOS-AK Workshop, Sanghai, China, June 2016.
    48. Y. S. Chauhan, "Modeling of FinFET and Naowire Transistor using industry standard BSIM-CMG model", International Symposium on the Physics of Semiconductors and Applications, Korea, July 2016.
    49. Y. S. Chauhan, "Compact Modeling of FinFET and Nanowire Transistor", National Conference on Semiconductor Materials and Devices, IIT Jodhpur, March 2016.
    50. Y. S. Chauhan, "Compact MOSFET Modeling", VIT University, Vellore, Tamilnadu, Feb. 2016.
    51. Y. S. Chauhan, "Modeling of FinFET and FDSOI Transistor", College of Engineering, Chengannur, Kerala, Dec. 2015.
    52. Y. S. Chauhan, "ASM-HEMT: Advanced SPICE Model for GaN HEMTs", Space Application Center - Indian Space Research Organization, Ahmedabad, Sept. 2015.
    53. Y. S. Chauhan, "Compact MOSFET Modeling", Semi-Conductor Laboratory, Mohali-Chandigarh, Aug. 2015.
    54. Y. S. Chauhan, "MOSFET to FinFET: Economics and Physics", Thapar University, Patiala, Aug. 2015.
    55. Y. S. Chauhan, "Finfet modeling for 10nm and beyond - Si, Ge and III-V channel", Indo-French Workshop on Emerging Trends in Electron Device Modeling, Bangalore, March 2015.
    56. S. Khandelwal, T. A. Fjeldly, Y. S. Chauhan, B. Iniguez, S. Ghosh, A. Dasgupta, K. Sharma, "ASM-HEMT Model: A Physics-based Compact Model for GaN HEMTs", MOS-AK Workshop, Berkeley, USA, Dec. 2014.
    57. Y. S. Chauhan, J. P. Duarte, H. Agarwal, S. Khandelwal, C. Hu, "Recent Enhancements in BSIM6 and BSIM-CMG models", MOS-AK Workshop, Berkeley, USA, Dec. 2014.
    58. Y. S. Chauhan, "Compact Modeling of Semiconductor Devices - MOSFET", Tutorial in IEEE International Conference on Emerging Electronics, December 2014.
    59. Y. S. Chauhan, "Semiconductor industry - Challenges and Opportunities", Institute of Engineering and Technology, DAVV, Indore, November 2014.
    60. Y. S. Chauhan, "High Performance Transistors: Present & Future trends", SGSITS, Indore, November 2014.
    61. H. Agarwal, Y. S. Chauhan, "Flicker Noise Modeling in BSIM6 Compact Model", MOS-AK Workshop, Venice, Italy, Sept. 2014.
    62. Y. S. Chauhan, "Compact Modeling of FinFET and Ultra-Thin-Body devices", INUP Workshop on Compact Modeling, Bangalore, August 2014.
    63. H. Agarwal, S. Khandelwal, Y. S. Chauhan, and C. Hu, "Noise Modeling in BSIM6 Compact Model", Workshop on Compact Modeling, Washington D.C., USA, June 2014.
    64. C. Yadav, S. Khandelwal, and Y. S. Chauhan, "Modeling of AlGaN/GaN FinFET", Workshop on Compact Modeling, Washington D.C., USA, June 2014.
    65. Y. S. Chauhan, "Semiconductor industry: CMOS technology and beyond", Motilal Nehru National Institute of Technology Allahabad, April 2014.
    66. Y. S. Chauhan, "Industry Standard SPICE Modeling", Solid State Physics Laboratory (SSPL) - DRDO, Delhi, June 2013.
    67. Y. S. Chauhan, M. Chalkiadaki, S. Venugopalan, M. A. Karim, N. Paydavosi, S. Jandhyala, J. P. Duarte, C. Enz, A. Niknejad, C. Hu, "Global Geometrical Scaling in BSIM6", MOS-AK Workshop, San Francisco, Dec. 2012.
    68. Y. S. Chauhan, M. A. Karim, A. Niknejad, C. Hu, "Thermal Network Extraction in Ultra-Thin-Body SOI MOSFETs", MOS-AK Workshop, Bordeaux, France, Sept. 2012.
    69. Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, P. Thakur, N. Paydavosi, A. Niknejad, C. Hu, "BSIM Models: From Multi-Gate to the Symmetric BSIM6", International Workshop on Device Modeling for Microsystems, Noida, March 2012.
    70. Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, P. Thakur, N. Paydavosi, A. Niknejad, C. Hu, W. wu, K. Dandu, K. Green, T. Krakowsky, G. Coram, S. Cherepko, S. Sirohi, A. Dutta, R. Williams, J. Watts, M.-A. Chalkiadakim A. Mangla, A. Bazigos, W. Grabinski, C. Enz, "Transitioning from BSIM4 to BSIM6", International Workshop on Device Modeling for Microsystems, Noida, March 2012.
    71. Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu, W. wu, K. Dandu, K. Green, G. Coram, S. Cherepko, J. Wang, S. Sirohi, J. Watts, M.-A. Chalkiadakim A. Mangla, A. Bazigos, F. Krummenacher, W. Grabinski, C. Enz, "BSIM6: Symmetric Bulk MOSFET Model", The Nano-Terra Workshop on the next generation MOSFET Compact Models, Lausanne, Switzerland, Dec. 2011.
    72. M. A. Karim, Y. S. Chauhan, S. Venugopalan, A. Niknejad, C. Hu, "BSIM-IMG: Surface Potential based UTBSOI MOSFET Model", The Nano-Terra Workshop on the next generation MOSFET Compact Models, Lausanne, Switzerland, Dec. 2011.
    73. S. Venugopalan, Y. S. Chauhan, M. A. Karim, A. Niknejad, C. Hu, "BSIM-CMG: Advanced FinFET Model", The Nano-Terra Workshop on the next generation MOSFET Compact Models, Lausanne, Switzerland, Dec. 2011.
    74. A. B. Sachid, Y. S. Chauhan and C. Hu, "Exploring Next-Generation FinFET Architectures for SRAM Applications", MOS-AK Workshop, Washington DC, USA, Dec. 2011.
    75. Y. S. Chauhan, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad and C. Hu, "BSIM6: Next generation RF MOSFET Model", MOS-AK Workshop, Washington DC, USA, Dec. 2011.
    76. D. Lu, S. Venugopalan, T. Morshed, Y. S. Chauhan, C-H Lin, M. Dunga, A. Niknejad and C. Hu, "A Multi-Gate CMOS Compact Model - BSIMMG", MOS-AK Workshop, San Francisco, USA, Dec. 2010.
    77. Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "A Compact Model for Circuit Simulation of High Voltage Lateral and Vertical DMOS Transistors", ROBUSPIC Power Device Workshop, Napoli, Italy, June 2006.
    78. Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "The HV-EKV MOSFET Model", Compact Model Council meeting, Boston, USA, May 2006.