Dr. Avinash Lahgere

Research Interest: She is working as a Junior Research Fellow (JRF) sponsored by SERB. She is working towards on emerging DRAM.

Research Interest: He is working as a Research Associate, and primarily involved in semiconductor devices charcaterization and experiments.

Research Interest: She is working as a JRF, and primarily involved in GaN HEMT device compact modeling for efficient power applications.

Research Interest: His research interests include Modeling and Characterization of GaN HEMTs, and RF Circuits Design.

Research Interest: Hafeez research interests include device to circuit level exploration of advanced nodes devices for logic and memory applications.

Research Interest:For his doctoral thesis he will be working on Compact and TCAD Modeling of GaN HEMT Devices.

Research Interest: Moaz research interests include TCAD, modeling, and design on GaN-based ESD.

Research Interest: Sahebe research interests include compact modeling of bsim-bulk, and high voltage LDMOS devices.

Research Interest: Vaibhav research interests include cryogenic compact modeling and characterization of FDSOI devices.

Research Interest: Ravi research interests include TCAD and advanced node device modeling for logic and memory applications.

Research Interest: Aalim will be working on compact modeling and characterization of ferroelectric devices.

Research Interest: Praveen will be working on reliability compact modeling and characterization of GaN HEMT.

Research Interest: Adarsh research interests include compact modeling and characterization of semiconductor devices.

Research Interest: Randhir is working on sub-3 nm CMOS device simulations using TCAD.

Research Interest: Harshvardhan is working wide-band power amplifier design.

Research Interest: Ishita currently working on advanced nodes SRAM design.

Research Interest: Lavanya currently working on 1T DRAM design.